Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Ook Sang Yoo, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won Ho Choi, Hyuk Min Kwon, Min Ki Na, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, Jin Suk Wang, Hi Deok Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a result, formation of insufficient low-k Ge oxides was effectively inhibited. It is confirmed that gate current of Si passivated Ge MOS was decreased by Si IL and decrease of gate current, Jg is saturated after Si IL of 2 nm. It was also observed that when Si IL is thick enough to restrict Ge outdiffusion, increase of Jg is not due to the temperature-induced Ge outdiffusion but due to the partial crystallization of HfO2 at higher annealing temperature.

Original languageEnglish
Pages (from-to)102-105
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume154-155
Issue number1-3
DOIs
Publication statusPublished - 2008 Dec 5

Fingerprint

MOS capacitors
Metallizing
interlayers
capacitors
Annealing
annealing
Substrates
Crystallization
Oxides
Interleukin-2
crystallization
Oxygen
Temperature
temperature
oxides
oxygen

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yoo, Ook Sang ; Oh, Jungwoo ; Kang, Chang Yong ; Lee, Byoung Hun ; Han, In Shik ; Choi, Won Ho ; Kwon, Hyuk Min ; Na, Min Ki ; Majhi, Prashant ; Tseng, Hsing Huang ; Jammy, Raj ; Wang, Jin Suk ; Lee, Hi Deok. / Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2008 ; Vol. 154-155, No. 1-3. pp. 102-105.
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abstract = "We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a result, formation of insufficient low-k Ge oxides was effectively inhibited. It is confirmed that gate current of Si passivated Ge MOS was decreased by Si IL and decrease of gate current, Jg is saturated after Si IL of 2 nm. It was also observed that when Si IL is thick enough to restrict Ge outdiffusion, increase of Jg is not due to the temperature-induced Ge outdiffusion but due to the partial crystallization of HfO2 at higher annealing temperature.",
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Yoo, OS, Oh, J, Kang, CY, Lee, BH, Han, IS, Choi, WH, Kwon, HM, Na, MK, Majhi, P, Tseng, HH, Jammy, R, Wang, JS & Lee, HD 2008, 'Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 154-155, no. 1-3, pp. 102-105. https://doi.org/10.1016/j.mseb.2008.06.031

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate. / Yoo, Ook Sang; Oh, Jungwoo; Kang, Chang Yong; Lee, Byoung Hun; Han, In Shik; Choi, Won Ho; Kwon, Hyuk Min; Na, Min Ki; Majhi, Prashant; Tseng, Hsing Huang; Jammy, Raj; Wang, Jin Suk; Lee, Hi Deok.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154-155, No. 1-3, 05.12.2008, p. 102-105.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

AU - Yoo, Ook Sang

AU - Oh, Jungwoo

AU - Kang, Chang Yong

AU - Lee, Byoung Hun

AU - Han, In Shik

AU - Choi, Won Ho

AU - Kwon, Hyuk Min

AU - Na, Min Ki

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Jammy, Raj

AU - Wang, Jin Suk

AU - Lee, Hi Deok

PY - 2008/12/5

Y1 - 2008/12/5

N2 - We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a result, formation of insufficient low-k Ge oxides was effectively inhibited. It is confirmed that gate current of Si passivated Ge MOS was decreased by Si IL and decrease of gate current, Jg is saturated after Si IL of 2 nm. It was also observed that when Si IL is thick enough to restrict Ge outdiffusion, increase of Jg is not due to the temperature-induced Ge outdiffusion but due to the partial crystallization of HfO2 at higher annealing temperature.

AB - We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a result, formation of insufficient low-k Ge oxides was effectively inhibited. It is confirmed that gate current of Si passivated Ge MOS was decreased by Si IL and decrease of gate current, Jg is saturated after Si IL of 2 nm. It was also observed that when Si IL is thick enough to restrict Ge outdiffusion, increase of Jg is not due to the temperature-induced Ge outdiffusion but due to the partial crystallization of HfO2 at higher annealing temperature.

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EP - 105

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

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