ZnO nanorods were electrochemically synthesized using various resistivities of Si substrates. With the increase of Si wafer resistivity from 0.01-0.02 to 110-150 Ω cm, the average diameter of ZnO nanorods increased, while the density of the nanorods decreased. Initial value of the current density increased with a decrease of the Si resistivity, accelerating nucleation and formation of a ZnO nanorods. The saturated current density was increased with a higher Si wafer resistivity, which may be due to an increased surface area of the ZnO layer exposed to the solution, elevating the surface concentration of electrons.
Bibliographical noteFunding Information:
This work was supported by grant no. R01-2006-000-10230-0 from the Basic Research Program of the Korea Science and Engineering Foundation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry