Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors

Kon Yi Heo, Keun Woo Lee, Sang Hoon Oh, Gun Hee Kim, Abderrafia Moujoud, Jean Ho Song, Hyun Jae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, we have fabricated thin film transistors (TFTs) from a solution-based indium gallium zinc oxide (IGZO) and single-walled carbon nanotube (SWNT) blend by varying SWNT concentration. In order to improve electrical performances of IGZO TFT, SWNTs were used as carrier transport rods. We found out that the saturation field effect mobility (μ sat ) and on/off current ratio varied when the SWNT concentration changed. The concentration of SWNT in the solution is a critical parameter to control the electrical performances of IGZO TFT. The optimized performance of IGZO TFT with 0.04wt.% SWNT concentration is as follows: μ sat of about 0.11cm 2 /Vs, an on/off current ratio of ∼ 10 5 , threshold voltage (V th ) of -2.5V, and a subthreshold slope (S-factor) of 4.1V/decade.

Original languageEnglish
Pages (from-to)87-95
Number of pages9
JournalMolecular Crystals and Liquid Crystals
Volume510
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Single-walled carbon nanotubes (SWCN)
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
indium
Electric properties
transistors
carbon nanotubes
electrical properties
thin films
Carrier transport
Threshold voltage
threshold voltage
rods
slopes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Heo, Kon Yi ; Lee, Keun Woo ; Oh, Sang Hoon ; Kim, Gun Hee ; Moujoud, Abderrafia ; Song, Jean Ho ; Kim, Hyun Jae. / Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors. In: Molecular Crystals and Liquid Crystals. 2009 ; Vol. 510. pp. 87-95.
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Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors. / Heo, Kon Yi; Lee, Keun Woo; Oh, Sang Hoon; Kim, Gun Hee; Moujoud, Abderrafia; Song, Jean Ho; Kim, Hyun Jae.

In: Molecular Crystals and Liquid Crystals, Vol. 510, 01.01.2009, p. 87-95.

Research output: Contribution to journalArticle

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AU - Heo, Kon Yi

AU - Lee, Keun Woo

AU - Oh, Sang Hoon

AU - Kim, Gun Hee

AU - Moujoud, Abderrafia

AU - Song, Jean Ho

AU - Kim, Hyun Jae

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