Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors

Kon Yi Heo, Keun Woo Lee, Sang Hoon Oh, Gun Hee Kim, Abderrafia Moujoud, Jean Ho Song, Hyun Jae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, we have fabricated thin film transistors (TFTs) from a solution-based indium gallium zinc oxide (IGZO) and single-walled carbon nanotube (SWNT) blend by varying SWNT concentration. In order to improve electrical performances of IGZO TFT, SWNTs were used as carrier transport rods. We found out that the saturation field effect mobility (μsat) and on/off current ratio varied when the SWNT concentration changed. The concentration of SWNT in the solution is a critical parameter to control the electrical performances of IGZO TFT. The optimized performance of IGZO TFT with 0.04wt.% SWNT concentration is as follows: μsat of about 0.11cm2/Vs, an on/off current ratio of ∼ 105, threshold voltage (Vth) of -2.5V, and a subthreshold slope (S-factor) of 4.1V/decade.

Original languageEnglish
Pages (from-to)87/[1221]-95/[1229]
JournalMolecular Crystals and Liquid Crystals
Volume510
DOIs
Publication statusPublished - 2009 Jan

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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