Effect of SiO2 etching inhibitor to H3PO4 for the selective Si3N4 wet etching of 3D NAND

Taehyeon Kim; Changjin Son; Taegun Park; Sangwoo Lim

doi:10.1149/09202.0137eccst

Effect of SiO₂ etching inhibitor to H₃PO₄ for the selective Si₃N₄ wet etching of 3D NAND

Taehyeon Kim, Changjin Son, Taegun Park, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

3D NAND has a vertically stacked semiconductor structure to increase the memory density of semiconductor devices. 3D NAND devices are based on the multiply stacked silicon nitride (Si₃N₄) and silicon dioxide (SiO₂) structure, and it is essential to high selectively etch Si₃N₄-to-SiO₂ in the fabrication process. Hot phosphoric acid (H₃PO₄) has been typically used in the Si₃N₄-to-SiO₂ selective etching process and the etch selectivity can increase by adding SiO₂ etching inhibitors in H₃PO₄. In order to increase etching rate of Si₃N₄ and Si₃N₄-to-SiO₂ etch selectivity, additives can be added in H₃PO₄. However, SiO₂ etching inhibitors to increase Si₃N₄-to-SiO₂ etch selectivity may occur by-product redeposition issue around the SiO₂-layered trenches of Si₃N₄/SiO₂ multi-stack structure. In this study, the etching behavior of the Si₃N₄/SiO₂ multi-stack structures in Si02 etching inhibitor-added H₃PO₄ was investigated.

Original language	English
Title of host publication	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
Editors	Koichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat
Publisher	Electrochemical Society Inc.
Pages	137-142
Number of pages	6
Edition	2
ISBN (Electronic)	9781607688761
ISBN (Print)	9781607688761
DOIs	https://doi.org/10.1149/09202.0137eccst
Publication status	Published - 2019
Event	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17

Publication series

Name	ECS Transactions
Number	2
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	19/10/13 → 19/10/17

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of future semiconductor devices.

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/09202.0137eccst

Cite this

Kim, T., Son, C., Park, T., & Lim, S. (2019). Effect of SiO₂ etching inhibitor to H₃PO₄ for the selective Si₃N₄ wet etching of 3D NAND. In K. Saga, P. W. Mertens, T. Hattori, J. Ruzyllo, & A. J. Muscat (Eds.), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 (2 ed., pp. 137-142). (ECS Transactions; Vol. 92, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/09202.0137eccst

Kim, Taehyeon ; Son, Changjin ; Park, Taegun et al. / Effect of SiO₂ etching inhibitor to H₃PO₄ for the selective Si₃N₄ wet etching of 3D NAND. 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. editor / Koichiro Saga ; Paul W. Mertens ; Takeshi Hattori ; Jerzy Ruzyllo ; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. pp. 137-142 (ECS Transactions; 2).

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title = "Effect of SiO2 etching inhibitor to H3PO4 for the selective Si3N4 wet etching of 3D NAND",

abstract = "3D NAND has a vertically stacked semiconductor structure to increase the memory density of semiconductor devices. 3D NAND devices are based on the multiply stacked silicon nitride (Si3N4) and silicon dioxide (SiO2) structure, and it is essential to high selectively etch Si3N4-to-SiO2 in the fabrication process. Hot phosphoric acid (H3PO4) has been typically used in the Si3N4-to-SiO2 selective etching process and the etch selectivity can increase by adding SiO2 etching inhibitors in H3PO4. In order to increase etching rate of Si3N4 and Si3N4-to-SiO2 etch selectivity, additives can be added in H3PO4. However, SiO2 etching inhibitors to increase Si3N4-to-SiO2 etch selectivity may occur by-product redeposition issue around the SiO2-layered trenches of Si3N4/SiO2 multi-stack structure. In this study, the etching behavior of the Si3N4/SiO2 multi-stack structures in Si02 etching inhibitor-added H3PO4 was investigated.",

author = "Taehyeon Kim and Changjin Son and Taegun Park and Sangwoo Lim",

note = "Funding Information: This work was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of future semiconductor devices. Publisher Copyright: {\textcopyright} The Electrochemical Society.; 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",

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Kim, T, Son, C, Park, T & Lim, S 2019, Effect of SiO₂ etching inhibitor to H₃PO₄ for the selective Si₃N₄ wet etching of 3D NAND. in K Saga, PW Mertens, T Hattori, J Ruzyllo & AJ Muscat (eds), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. 2 edn, ECS Transactions, no. 2, vol. 92, Electrochemical Society Inc., pp. 137-142, 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09202.0137eccst

Effect of SiO₂ etching inhibitor to H₃PO₄ for the selective Si₃N₄ wet etching of 3D NAND. / Kim, Taehyeon; Son, Changjin; Park, Taegun et al.

16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. ed. / Koichiro Saga; Paul W. Mertens; Takeshi Hattori; Jerzy Ruzyllo; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. p. 137-142 (ECS Transactions; Vol. 92, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Effect of SiO2 etching inhibitor to H3PO4 for the selective Si3N4 wet etching of 3D NAND

AU - Kim, Taehyeon

AU - Son, Changjin

AU - Park, Taegun

AU - Lim, Sangwoo

N1 - Funding Information: This work was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of future semiconductor devices. Publisher Copyright: © The Electrochemical Society.

PY - 2019

Y1 - 2019

N2 - 3D NAND has a vertically stacked semiconductor structure to increase the memory density of semiconductor devices. 3D NAND devices are based on the multiply stacked silicon nitride (Si3N4) and silicon dioxide (SiO2) structure, and it is essential to high selectively etch Si3N4-to-SiO2 in the fabrication process. Hot phosphoric acid (H3PO4) has been typically used in the Si3N4-to-SiO2 selective etching process and the etch selectivity can increase by adding SiO2 etching inhibitors in H3PO4. In order to increase etching rate of Si3N4 and Si3N4-to-SiO2 etch selectivity, additives can be added in H3PO4. However, SiO2 etching inhibitors to increase Si3N4-to-SiO2 etch selectivity may occur by-product redeposition issue around the SiO2-layered trenches of Si3N4/SiO2 multi-stack structure. In this study, the etching behavior of the Si3N4/SiO2 multi-stack structures in Si02 etching inhibitor-added H3PO4 was investigated.

AB - 3D NAND has a vertically stacked semiconductor structure to increase the memory density of semiconductor devices. 3D NAND devices are based on the multiply stacked silicon nitride (Si3N4) and silicon dioxide (SiO2) structure, and it is essential to high selectively etch Si3N4-to-SiO2 in the fabrication process. Hot phosphoric acid (H3PO4) has been typically used in the Si3N4-to-SiO2 selective etching process and the etch selectivity can increase by adding SiO2 etching inhibitors in H3PO4. In order to increase etching rate of Si3N4 and Si3N4-to-SiO2 etch selectivity, additives can be added in H3PO4. However, SiO2 etching inhibitors to increase Si3N4-to-SiO2 etch selectivity may occur by-product redeposition issue around the SiO2-layered trenches of Si3N4/SiO2 multi-stack structure. In this study, the etching behavior of the Si3N4/SiO2 multi-stack structures in Si02 etching inhibitor-added H3PO4 was investigated.

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Kim T, Son C, Park T, Lim S. Effect of SiO₂ etching inhibitor to H₃PO₄ for the selective Si₃N₄ wet etching of 3D NAND. In Saga K, Mertens PW, Hattori T, Ruzyllo J, Muscat AJ, editors, 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. 2 ed. Electrochemical Society Inc. 2019. p. 137-142. (ECS Transactions; 2). doi: 10.1149/09202.0137eccst