Effect of SiO2 etching inhibitor to H3PO4 for the selective Si3N4 wet etching of 3D NAND

Taehyeon Kim, Changjin Son, Taegun Park, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

3D NAND has a vertically stacked semiconductor structure to increase the memory density of semiconductor devices. 3D NAND devices are based on the multiply stacked silicon nitride (Si3N4) and silicon dioxide (SiO2) structure, and it is essential to high selectively etch Si3N4-to-SiO2 in the fabrication process. Hot phosphoric acid (H3PO4) has been typically used in the Si3N4-to-SiO2 selective etching process and the etch selectivity can increase by adding SiO2 etching inhibitors in H3PO4. In order to increase etching rate of Si3N4 and Si3N4-to-SiO2 etch selectivity, additives can be added in H3PO4. However, SiO2 etching inhibitors to increase Si3N4-to-SiO2 etch selectivity may occur by-product redeposition issue around the SiO2-layered trenches of Si3N4/SiO2 multi-stack structure. In this study, the etching behavior of the Si3N4/SiO2 multi-stack structures in Si02 etching inhibitor-added H3PO4 was investigated. In addition, high selective SbN4 etching with the control of redeposition was performed on the Si3N4/SiO2 multi-stack structure by adding proper SiO2 etching inhibitor in H3PO4

Original languageEnglish
Title of host publication16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
EditorsKoichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat
PublisherElectrochemical Society Inc.
Pages137-142
Number of pages6
Edition2
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2019 Jan 1
Event16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States
Duration: 2019 Oct 132019 Oct 17

Publication series

NameECS Transactions
Number2
Volume92
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
CountryUnited States
CityAtlanta
Period19/10/1319/10/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Effect of SiO<sub>2</sub> etching inhibitor to H<sub>3</sub>PO<sub>4</sub> for the selective Si<sub>3</sub>N<sub>4</sub> wet etching of 3D NAND'. Together they form a unique fingerprint.

  • Cite this

    Kim, T., Son, C., Park, T., & Lim, S. (2019). Effect of SiO2 etching inhibitor to H3PO4 for the selective Si3N4 wet etching of 3D NAND. In K. Saga, P. W. Mertens, T. Hattori, J. Ruzyllo, & A. J. Muscat (Eds.), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 (2 ed., pp. 137-142). (ECS Transactions; Vol. 92, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/09202.0137eccst