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Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels
Heedo Na, Jinho Oh, Kyumin Lee, Jonggi Kim, Sunghoon Lee, Dong Hyeok Lim, Mann Ho Cho, Hyunchul Sohn
Research output: Contribution to journal › Article › peer-review
3
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(Scopus)