Effect of SiOx/SiNx stacked gate dielectric structure on the instability of a-IGZO thin film transistors

D. Shin, E. N. Cho, S. Park, Ilgu Yun

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Among amorphous oxide thin film transistors, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT) is currently highlightened because of its advantages such as high mobility, transparent characteristic, flexibility and so on. It is required to ensure the stability of the device under various environments has to be verified before high-volume manufacturing. In this paper, the instability of amorphous InGaZnO TFT depending on the SiO x/SiNx stacked gate dielectric material is investigated through bias and light illumination stress test. Here, the TFT's instability characteristics are examined by the density of total trap states at the channel/gate dielectric interface (Nit).

Original languageEnglish
Pages (from-to)951-955
Number of pages5
JournalECS Transactions
Volume60
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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Gate dielectrics
Gallium
Thin film transistors
Zinc oxide
Indium
Oxide films
Amorphous films
Lighting

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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Effect of SiOx/SiNx stacked gate dielectric structure on the instability of a-IGZO thin film transistors. / Shin, D.; Cho, E. N.; Park, S.; Yun, Ilgu.

In: ECS Transactions, Vol. 60, No. 1, 01.01.2014, p. 951-955.

Research output: Contribution to journalArticle

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