Effect of sputtering power on the physical properties of dc magnetron sputtered copper oxide thin films

A. Sivasankar Reddy, Hyung Ho Park, V. Sahadeva Reddy, K. V.S. Reddy, N. S. Sarma, S. Kaleemulla, S. Uthanna, P. Sreedhara Reddy

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm-2. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers ≤0.76 W cm-2 exhibited mixed phase of Cu2O and CuO while those formed at 1.08 W cm-2 were single phase Cu2O. The single-phase Cu2O films formed at a sputtering power of 1.08 W cm-2 showed electrical resistivity of 46 Ω cm, Hall mobility of 5.7 cm2 V-1 s-1 and optical band gap of 2.04 eV.

Original languageEnglish
Pages (from-to)397-401
Number of pages5
JournalMaterials Chemistry and Physics
Volume110
Issue number2-3
DOIs
Publication statusPublished - 2008 Aug 15

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636) and the Second Stage of Brain Korea 21 Project in 2008.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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