Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm-2. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers ≤0.76 W cm-2 exhibited mixed phase of Cu2O and CuO while those formed at 1.08 W cm-2 were single phase Cu2O. The single-phase Cu2O films formed at a sputtering power of 1.08 W cm-2 showed electrical resistivity of 46 Ω cm, Hall mobility of 5.7 cm2 V-1 s-1 and optical band gap of 2.04 eV.
Bibliographical noteFunding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636) and the Second Stage of Brain Korea 21 Project in 2008.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics