Effect of SrTiO 3 buffer layer on the phase formation and properties of direct-patternable BiFeO 3 thin films fabricated using photochemical metal-organic deposition

Hong Sub Lee, Hye Jung Choi, Sung Woong Chung, Hyung-Ho Park

Research output: Contribution to journalArticle

Abstract

The formation of BiFeO 3 without impurity phases, such as excess bismuth and iron, has been possible in only a narrow pressuretemperature- stoichiometric window. A direct-patterned BiFeO 3 film using photochemical metal-organic deposition (PMOD) was fabricated without a conventional etching. BiFeO 3 film was formed on a SrTiO 3 buffer layer with a perovskite structure and a lattice constant of 3.905α in order to study the substrate effect during phase formation. This study showed the phase formation and electrical properties of the direct-patternable PMOD BiFeO 3 thin films. The SrTiO 3 buffer layer was found to somewhat prevent the formation of a Fe excess phase in BiFeO 3 after anneal at 550°C for 20min under O2 and N2 atmospheres. The measured remnant polarization (Pr) and coercive field (Ec) values of the Pt/BiFeO 3 (200 nm)/SrTiO 3 (40 nm)/Pt/Si structure were 10 μC/cm2 and 300kV/cm, respectively. Leakage current of perovskite BiFeO 3 film was found to be dominated by PooleFrenkel emission as other perovskite ferroelectrics. To obtain an image, a spin-coated BiFeO 3 film was exposed to UV for 15min and then rinsed in hexane. From this work, it was revealed that the direct-patterning of BiFeO 3 films could be applicable for the fabrication of micro-patterned systems using a SrTiO 3 buffer layer with controlled reactant stoichiometry.

Original languageEnglish
Pages (from-to)1024-1027
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume118
Issue number1383
DOIs
Publication statusPublished - 2010 Jan 1

Fingerprint

Buffer layers
buffers
Metals
Thin films
Perovskite
thin films
metals
Bismuth
Hexanes
Hexane
Stoichiometry
Leakage currents
bismuth
Lattice constants
Ferroelectric materials
stoichiometry
Etching
Electric properties
leakage
Iron

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{db44efe0cdf84ac7a02d90b1d41bdd7c,
title = "Effect of SrTiO 3 buffer layer on the phase formation and properties of direct-patternable BiFeO 3 thin films fabricated using photochemical metal-organic deposition",
abstract = "The formation of BiFeO 3 without impurity phases, such as excess bismuth and iron, has been possible in only a narrow pressuretemperature- stoichiometric window. A direct-patterned BiFeO 3 film using photochemical metal-organic deposition (PMOD) was fabricated without a conventional etching. BiFeO 3 film was formed on a SrTiO 3 buffer layer with a perovskite structure and a lattice constant of 3.905α in order to study the substrate effect during phase formation. This study showed the phase formation and electrical properties of the direct-patternable PMOD BiFeO 3 thin films. The SrTiO 3 buffer layer was found to somewhat prevent the formation of a Fe excess phase in BiFeO 3 after anneal at 550°C for 20min under O2 and N2 atmospheres. The measured remnant polarization (Pr) and coercive field (Ec) values of the Pt/BiFeO 3 (200 nm)/SrTiO 3 (40 nm)/Pt/Si structure were 10 μC/cm2 and 300kV/cm, respectively. Leakage current of perovskite BiFeO 3 film was found to be dominated by PooleFrenkel emission as other perovskite ferroelectrics. To obtain an image, a spin-coated BiFeO 3 film was exposed to UV for 15min and then rinsed in hexane. From this work, it was revealed that the direct-patterning of BiFeO 3 films could be applicable for the fabrication of micro-patterned systems using a SrTiO 3 buffer layer with controlled reactant stoichiometry.",
author = "Lee, {Hong Sub} and Choi, {Hye Jung} and Chung, {Sung Woong} and Hyung-Ho Park",
year = "2010",
month = "1",
day = "1",
doi = "10.2109/jcersj2.118.1024",
language = "English",
volume = "118",
pages = "1024--1027",
journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
issn = "1882-0743",
publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",
number = "1383",

}

Effect of SrTiO 3 buffer layer on the phase formation and properties of direct-patternable BiFeO 3 thin films fabricated using photochemical metal-organic deposition . / Lee, Hong Sub; Choi, Hye Jung; Chung, Sung Woong; Park, Hyung-Ho.

In: Journal of the Ceramic Society of Japan, Vol. 118, No. 1383, 01.01.2010, p. 1024-1027.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of SrTiO 3 buffer layer on the phase formation and properties of direct-patternable BiFeO 3 thin films fabricated using photochemical metal-organic deposition

AU - Lee, Hong Sub

AU - Choi, Hye Jung

AU - Chung, Sung Woong

AU - Park, Hyung-Ho

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The formation of BiFeO 3 without impurity phases, such as excess bismuth and iron, has been possible in only a narrow pressuretemperature- stoichiometric window. A direct-patterned BiFeO 3 film using photochemical metal-organic deposition (PMOD) was fabricated without a conventional etching. BiFeO 3 film was formed on a SrTiO 3 buffer layer with a perovskite structure and a lattice constant of 3.905α in order to study the substrate effect during phase formation. This study showed the phase formation and electrical properties of the direct-patternable PMOD BiFeO 3 thin films. The SrTiO 3 buffer layer was found to somewhat prevent the formation of a Fe excess phase in BiFeO 3 after anneal at 550°C for 20min under O2 and N2 atmospheres. The measured remnant polarization (Pr) and coercive field (Ec) values of the Pt/BiFeO 3 (200 nm)/SrTiO 3 (40 nm)/Pt/Si structure were 10 μC/cm2 and 300kV/cm, respectively. Leakage current of perovskite BiFeO 3 film was found to be dominated by PooleFrenkel emission as other perovskite ferroelectrics. To obtain an image, a spin-coated BiFeO 3 film was exposed to UV for 15min and then rinsed in hexane. From this work, it was revealed that the direct-patterning of BiFeO 3 films could be applicable for the fabrication of micro-patterned systems using a SrTiO 3 buffer layer with controlled reactant stoichiometry.

AB - The formation of BiFeO 3 without impurity phases, such as excess bismuth and iron, has been possible in only a narrow pressuretemperature- stoichiometric window. A direct-patterned BiFeO 3 film using photochemical metal-organic deposition (PMOD) was fabricated without a conventional etching. BiFeO 3 film was formed on a SrTiO 3 buffer layer with a perovskite structure and a lattice constant of 3.905α in order to study the substrate effect during phase formation. This study showed the phase formation and electrical properties of the direct-patternable PMOD BiFeO 3 thin films. The SrTiO 3 buffer layer was found to somewhat prevent the formation of a Fe excess phase in BiFeO 3 after anneal at 550°C for 20min under O2 and N2 atmospheres. The measured remnant polarization (Pr) and coercive field (Ec) values of the Pt/BiFeO 3 (200 nm)/SrTiO 3 (40 nm)/Pt/Si structure were 10 μC/cm2 and 300kV/cm, respectively. Leakage current of perovskite BiFeO 3 film was found to be dominated by PooleFrenkel emission as other perovskite ferroelectrics. To obtain an image, a spin-coated BiFeO 3 film was exposed to UV for 15min and then rinsed in hexane. From this work, it was revealed that the direct-patterning of BiFeO 3 films could be applicable for the fabrication of micro-patterned systems using a SrTiO 3 buffer layer with controlled reactant stoichiometry.

UR - http://www.scopus.com/inward/record.url?scp=78149342425&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149342425&partnerID=8YFLogxK

U2 - 10.2109/jcersj2.118.1024

DO - 10.2109/jcersj2.118.1024

M3 - Article

VL - 118

SP - 1024

EP - 1027

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 1882-0743

IS - 1383

ER -