The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 × 10-4 A/cm2 at -1 MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||6 A|
|Publication status||Published - 2003 Jun|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)