Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric

Jin Hyung Jun, Doo Jin Choi, Keung Ho Kim, Ki Young Oh, Chul Ju Hwang

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 × 10-4 A/cm2 at -1 MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.

Original languageEnglish
Pages (from-to)3519-3522
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
DOIs
Publication statusPublished - 2003 Jun

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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