Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric

Jin Hyung Jun, Doo Jin Choi, Keung Ho Kim, Ki Young Oh, Chul Ju Hwang

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Abstract

The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 × 10-4 A/cm2 at -1 MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.

Original languageEnglish
Pages (from-to)3519-3522
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
Publication statusPublished - 2003 Jun 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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