Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

K. C. Das, S. P. Ghosh, N. Tripathy, G. Bose, T. Lee, J. M. Myoung, J. P. Kar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

Original languageEnglish
Title of host publicationSolid State Physics
Subtitle of host publicationProceedings of the 59th DAE Solid State Physics Symposium 2014
EditorsR. Chitra, N. K. Sahoo, Dibyendu Bhattacharyya
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735413108
DOIs
Publication statusPublished - 2015 Jun 24
Event59th DAE Solid State Physics Symposium, SSPS 2014 - Vellore, Tamilnadu, India
Duration: 2014 Dec 162014 Dec 20

Publication series

NameAIP Conference Proceedings
Volume1665
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference59th DAE Solid State Physics Symposium, SSPS 2014
CountryIndia
CityVellore, Tamilnadu
Period14/12/1614/12/20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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