In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.
|Title of host publication||Solid State Physics|
|Subtitle of host publication||Proceedings of the 59th DAE Solid State Physics Symposium 2014|
|Editors||R. Chitra, N. K. Sahoo, Dibyendu Bhattacharyya|
|Publisher||American Institute of Physics Inc.|
|Publication status||Published - 2015 Jun 24|
|Event||59th DAE Solid State Physics Symposium, SSPS 2014 - Vellore, Tamilnadu, India|
Duration: 2014 Dec 16 → 2014 Dec 20
|Name||AIP Conference Proceedings|
|Conference||59th DAE Solid State Physics Symposium, SSPS 2014|
|Period||14/12/16 → 14/12/20|
Bibliographical notePublisher Copyright:
© 2015 AIP Publishing LLC.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)