Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

K. C. Das; S. P. Ghosh; N. Tripathy; G. Bose; T. Lee; J. M. Myoung; J. P. Kar

doi:10.1063/1.4917978

Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

K. C. Das, S. P. Ghosh, N. Tripathy, G. Bose, T. Lee, J. M. Myoung, J. P. Kar

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

Original language	English
Title of host publication	Solid State Physics
Subtitle of host publication	Proceedings of the 59th DAE Solid State Physics Symposium 2014
Editors	R. Chitra, N. K. Sahoo, Dibyendu Bhattacharyya
Publisher	American Institute of Physics Inc.
ISBN (Electronic)	9780735413108
DOIs	https://doi.org/10.1063/1.4917978
Publication status	Published - 2015 Jun 24
Event	59th DAE Solid State Physics Symposium, SSPS 2014 - Vellore, Tamilnadu, India Duration: 2014 Dec 16 → 2014 Dec 20

Publication series

Name	AIP Conference Proceedings
Volume	1665
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	59th DAE Solid State Physics Symposium, SSPS 2014
Country	India
City	Vellore, Tamilnadu
Period	14/12/16 → 14/12/20

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.4917978

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Das, K. C., Ghosh, S. P., Tripathy, N., Bose, G., Lee, T., Myoung, J. M., & Kar, J. P. (2015). Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. In R. Chitra, N. K. Sahoo, & D. Bhattacharyya (Eds.), Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014 [080074] (AIP Conference Proceedings; Vol. 1665). American Institute of Physics Inc.. https://doi.org/10.1063/1.4917978

Das, K. C. ; Ghosh, S. P. ; Tripathy, N. ; Bose, G. ; Lee, T. ; Myoung, J. M. ; Kar, J. P. / Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. editor / R. Chitra ; N. K. Sahoo ; Dibyendu Bhattacharyya. American Institute of Physics Inc., 2015. (AIP Conference Proceedings).

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abstract = "In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.",

author = "Das, {K. C.} and Ghosh, {S. P.} and N. Tripathy and G. Bose and T. Lee and Myoung, {J. M.} and Kar, {J. P.}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.; 59th DAE Solid State Physics Symposium, SSPS 2014 ; Conference date: 16-12-2014 Through 20-12-2014",

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Das, KC, Ghosh, SP, Tripathy, N, Bose, G, Lee, T, Myoung, JM & Kar, JP 2015, Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. in R Chitra, NK Sahoo & D Bhattacharyya (eds), Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014., 080074, AIP Conference Proceedings, vol. 1665, American Institute of Physics Inc., 59th DAE Solid State Physics Symposium, SSPS 2014, Vellore, Tamilnadu, India, 14/12/16. https://doi.org/10.1063/1.4917978

Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. / Das, K. C.; Ghosh, S. P.; Tripathy, N.; Bose, G.; Lee, T.; Myoung, J. M.; Kar, J. P.

Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. ed. / R. Chitra; N. K. Sahoo; Dibyendu Bhattacharyya. American Institute of Physics Inc., 2015. 080074 (AIP Conference Proceedings; Vol. 1665).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Das, K. C.

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N2 - In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

AB - In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

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Das KC, Ghosh SP, Tripathy N, Bose G, Lee T, Myoung JM et al. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. In Chitra R, Sahoo NK, Bhattacharyya D, editors, Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. American Institute of Physics Inc. 2015. 080074. (AIP Conference Proceedings). https://doi.org/10.1063/1.4917978

Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

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