@inproceedings{8be433c8a8ae406aae6d7b147e4efdba,
title = "Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films",
abstract = "In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.",
author = "Das, {K. C.} and Ghosh, {S. P.} and N. Tripathy and G. Bose and T. Lee and Myoung, {J. M.} and Kar, {J. P.}",
note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 59th DAE Solid State Physics Symposium, SSPS 2014 ; Conference date: 16-12-2014 Through 20-12-2014",
year = "2015",
month = jun,
day = "24",
doi = "10.1063/1.4917978",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "R. Chitra and Sahoo, {N. K.} and Dibyendu Bhattacharyya",
booktitle = "Solid State Physics",
}