Abstract
In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.
| Original language | English |
|---|---|
| Title of host publication | Solid State Physics |
| Subtitle of host publication | Proceedings of the 59th DAE Solid State Physics Symposium 2014 |
| Editors | R. Chitra, N. K. Sahoo, Dibyendu Bhattacharyya |
| Publisher | American Institute of Physics Inc. |
| ISBN (Electronic) | 9780735413108 |
| DOIs | |
| Publication status | Published - 2015 Jun 24 |
| Event | 59th DAE Solid State Physics Symposium, SSPS 2014 - Vellore, Tamilnadu, India Duration: 2014 Dec 16 → 2014 Dec 20 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1665 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Conference
| Conference | 59th DAE Solid State Physics Symposium, SSPS 2014 |
|---|---|
| Country | India |
| City | Vellore, Tamilnadu |
| Period | 14/12/16 → 14/12/20 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. / Das, K. C.; Ghosh, S. P.; Tripathy, N.; Bose, G.; Lee, T.; Myoung, Jae Min; Kar, J. P.
Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. ed. / R. Chitra; N. K. Sahoo; Dibyendu Bhattacharyya. American Institute of Physics Inc., 2015. 080074 (AIP Conference Proceedings; Vol. 1665).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films
AU - Das, K. C.
AU - Ghosh, S. P.
AU - Tripathy, N.
AU - Bose, G.
AU - Lee, T.
AU - Myoung, Jae Min
AU - Kar, J. P.
PY - 2015/6/24
Y1 - 2015/6/24
N2 - In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.
AB - In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.
UR - http://www.scopus.com/inward/record.url?scp=85063825002&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85063825002&partnerID=8YFLogxK
U2 - 10.1063/1.4917978
DO - 10.1063/1.4917978
M3 - Conference contribution
AN - SCOPUS:85063825002
T3 - AIP Conference Proceedings
BT - Solid State Physics
A2 - Chitra, R.
A2 - Sahoo, N. K.
A2 - Bhattacharyya, Dibyendu
PB - American Institute of Physics Inc.
ER -