Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

K. C. Das, S. P. Ghosh, N. Tripathy, G. Bose, T. Lee, Jae Min Myoung, J. P. Kar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

Original languageEnglish
Title of host publicationSolid State Physics
Subtitle of host publicationProceedings of the 59th DAE Solid State Physics Symposium 2014
EditorsR. Chitra, N. K. Sahoo, Dibyendu Bhattacharyya
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735413108
DOIs
Publication statusPublished - 2015 Jun 24
Event59th DAE Solid State Physics Symposium, SSPS 2014 - Vellore, Tamilnadu, India
Duration: 2014 Dec 162014 Dec 20

Publication series

NameAIP Conference Proceedings
Volume1665
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference59th DAE Solid State Physics Symposium, SSPS 2014
CountryIndia
CityVellore, Tamilnadu
Period14/12/1614/12/20

Fingerprint

hafnium oxides
electrical properties
thin films
electric potential
room temperature
electrical measurement
temperature
radio frequencies
magnetron sputtering
x ray diffraction
leakage
capacitance
oxides
silicon
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Das, K. C., Ghosh, S. P., Tripathy, N., Bose, G., Lee, T., Myoung, J. M., & Kar, J. P. (2015). Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. In R. Chitra, N. K. Sahoo, & D. Bhattacharyya (Eds.), Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014 [080074] (AIP Conference Proceedings; Vol. 1665). American Institute of Physics Inc.. https://doi.org/10.1063/1.4917978
Das, K. C. ; Ghosh, S. P. ; Tripathy, N. ; Bose, G. ; Lee, T. ; Myoung, Jae Min ; Kar, J. P. / Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. editor / R. Chitra ; N. K. Sahoo ; Dibyendu Bhattacharyya. American Institute of Physics Inc., 2015. (AIP Conference Proceedings).
@inproceedings{8be433c8a8ae406aae6d7b147e4efdba,
title = "Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films",
abstract = "In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.",
author = "Das, {K. C.} and Ghosh, {S. P.} and N. Tripathy and G. Bose and T. Lee and Myoung, {Jae Min} and Kar, {J. P.}",
year = "2015",
month = "6",
day = "24",
doi = "10.1063/1.4917978",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "R. Chitra and Sahoo, {N. K.} and Dibyendu Bhattacharyya",
booktitle = "Solid State Physics",

}

Das, KC, Ghosh, SP, Tripathy, N, Bose, G, Lee, T, Myoung, JM & Kar, JP 2015, Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. in R Chitra, NK Sahoo & D Bhattacharyya (eds), Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014., 080074, AIP Conference Proceedings, vol. 1665, American Institute of Physics Inc., 59th DAE Solid State Physics Symposium, SSPS 2014, Vellore, Tamilnadu, India, 14/12/16. https://doi.org/10.1063/1.4917978

Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. / Das, K. C.; Ghosh, S. P.; Tripathy, N.; Bose, G.; Lee, T.; Myoung, Jae Min; Kar, J. P.

Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. ed. / R. Chitra; N. K. Sahoo; Dibyendu Bhattacharyya. American Institute of Physics Inc., 2015. 080074 (AIP Conference Proceedings; Vol. 1665).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

AU - Das, K. C.

AU - Ghosh, S. P.

AU - Tripathy, N.

AU - Bose, G.

AU - Lee, T.

AU - Myoung, Jae Min

AU - Kar, J. P.

PY - 2015/6/24

Y1 - 2015/6/24

N2 - In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

AB - In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 ?C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

UR - http://www.scopus.com/inward/record.url?scp=85063825002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063825002&partnerID=8YFLogxK

U2 - 10.1063/1.4917978

DO - 10.1063/1.4917978

M3 - Conference contribution

AN - SCOPUS:85063825002

T3 - AIP Conference Proceedings

BT - Solid State Physics

A2 - Chitra, R.

A2 - Sahoo, N. K.

A2 - Bhattacharyya, Dibyendu

PB - American Institute of Physics Inc.

ER -

Das KC, Ghosh SP, Tripathy N, Bose G, Lee T, Myoung JM et al. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. In Chitra R, Sahoo NK, Bhattacharyya D, editors, Solid State Physics: Proceedings of the 59th DAE Solid State Physics Symposium 2014. American Institute of Physics Inc. 2015. 080074. (AIP Conference Proceedings). https://doi.org/10.1063/1.4917978