Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films

A. Sivasankar Reddy, Hyung-Ho Park, G. Mohan Rao, S. Uthanna, P. Sreedhara Reddy

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

Original languageEnglish
Pages (from-to)401-405
Number of pages5
JournalJournal of Alloys and Compounds
Volume474
Issue number1-2
DOIs
Publication statusPublished - 2009 Apr 17

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Physical properties
Substrates
Temperature
Hall mobility
Aluminum Oxide
Reactive sputtering
Optical band gaps
CuAlO(2)
Magnetron sputtering
Oxide films
Carrier concentration
Copper
Electric properties
Aluminum

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Reddy, A. Sivasankar ; Park, Hyung-Ho ; Rao, G. Mohan ; Uthanna, S. ; Reddy, P. Sreedhara. / Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films. In: Journal of Alloys and Compounds. 2009 ; Vol. 474, No. 1-2. pp. 401-405.
@article{6fe8e51a18e3485f95019895d81bd4aa,
title = "Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films",
abstract = "Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.",
author = "Reddy, {A. Sivasankar} and Hyung-Ho Park and Rao, {G. Mohan} and S. Uthanna and Reddy, {P. Sreedhara}",
year = "2009",
month = "4",
day = "17",
doi = "10.1016/j.jallcom.2008.06.107",
language = "English",
volume = "474",
pages = "401--405",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",
number = "1-2",

}

Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films. / Reddy, A. Sivasankar; Park, Hyung-Ho; Rao, G. Mohan; Uthanna, S.; Reddy, P. Sreedhara.

In: Journal of Alloys and Compounds, Vol. 474, No. 1-2, 17.04.2009, p. 401-405.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films

AU - Reddy, A. Sivasankar

AU - Park, Hyung-Ho

AU - Rao, G. Mohan

AU - Uthanna, S.

AU - Reddy, P. Sreedhara

PY - 2009/4/17

Y1 - 2009/4/17

N2 - Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

AB - Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

UR - http://www.scopus.com/inward/record.url?scp=61649121590&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=61649121590&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2008.06.107

DO - 10.1016/j.jallcom.2008.06.107

M3 - Article

VL - 474

SP - 401

EP - 405

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

IS - 1-2

ER -