Effect of sulfur and copper amounts in sol-gel precursor solution on the growth, crystal properties, and optical properties of Cu2ZnSnS 4 films

Dongwan Seo, Sangwoo Lim

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14 Citations (Scopus)

Abstract

Cu2ZnSnS4 (CZTS) thin films were deposited by sol-gel spin coating using precursor solutions prepared with copper acetate, zinc acetate, tin chloride, and thiourea in methanol and ethylenediamine followed by sulfurization. Sol-gel precursor solutions were prepared with different amounts of sulfur and copper, and their effects on film growth, crystal properties, and optical properties of CZTS films were investigated. CZTS film thickness increased with the amount of metal salt in the precursor solution. This is attributed to an increase in solution viscosity and a decrease in the solution density/viscosity ratio. All CZTS thin films exhibited kesterite structures with absorption coefficients larger than 104 cm-1 in the visible region. Band gap energy increased with increasing amounts of sulfur and decreasing amounts of copper. The blue shift of the band gap is attributed to changes in the degree of p-d hybridization related to Cu d- and S p-levels. The role of sulfur and copper on Hall mobility and carrier concentration was investigated. By optimizing the metal salt ratio in the precursor, CZTS film with a resistivity of 5.3 × 10-2 Ωcm were prepared.

Original languageEnglish
Pages (from-to)3756-3763
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume24
Issue number10
DOIs
Publication statusPublished - 2013 Oct 1

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Crystallization
Sulfur
Crystal growth
Sol-gels
crystal growth
Copper
sulfur
Optical properties
gels
optical properties
copper
ethylenediamine
acetates
Energy gap
Zinc Acetate
Salts
Metals
Viscosity
viscosity
salts

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Effect of sulfur and copper amounts in sol-gel precursor solution on the growth, crystal properties, and optical properties of Cu2ZnSnS 4 films",
abstract = "Cu2ZnSnS4 (CZTS) thin films were deposited by sol-gel spin coating using precursor solutions prepared with copper acetate, zinc acetate, tin chloride, and thiourea in methanol and ethylenediamine followed by sulfurization. Sol-gel precursor solutions were prepared with different amounts of sulfur and copper, and their effects on film growth, crystal properties, and optical properties of CZTS films were investigated. CZTS film thickness increased with the amount of metal salt in the precursor solution. This is attributed to an increase in solution viscosity and a decrease in the solution density/viscosity ratio. All CZTS thin films exhibited kesterite structures with absorption coefficients larger than 104 cm-1 in the visible region. Band gap energy increased with increasing amounts of sulfur and decreasing amounts of copper. The blue shift of the band gap is attributed to changes in the degree of p-d hybridization related to Cu d- and S p-levels. The role of sulfur and copper on Hall mobility and carrier concentration was investigated. By optimizing the metal salt ratio in the precursor, CZTS film with a resistivity of 5.3 × 10-2 Ωcm were prepared.",
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T1 - Effect of sulfur and copper amounts in sol-gel precursor solution on the growth, crystal properties, and optical properties of Cu2ZnSnS 4 films

AU - Seo, Dongwan

AU - Lim, Sangwoo

PY - 2013/10/1

Y1 - 2013/10/1

N2 - Cu2ZnSnS4 (CZTS) thin films were deposited by sol-gel spin coating using precursor solutions prepared with copper acetate, zinc acetate, tin chloride, and thiourea in methanol and ethylenediamine followed by sulfurization. Sol-gel precursor solutions were prepared with different amounts of sulfur and copper, and their effects on film growth, crystal properties, and optical properties of CZTS films were investigated. CZTS film thickness increased with the amount of metal salt in the precursor solution. This is attributed to an increase in solution viscosity and a decrease in the solution density/viscosity ratio. All CZTS thin films exhibited kesterite structures with absorption coefficients larger than 104 cm-1 in the visible region. Band gap energy increased with increasing amounts of sulfur and decreasing amounts of copper. The blue shift of the band gap is attributed to changes in the degree of p-d hybridization related to Cu d- and S p-levels. The role of sulfur and copper on Hall mobility and carrier concentration was investigated. By optimizing the metal salt ratio in the precursor, CZTS film with a resistivity of 5.3 × 10-2 Ωcm were prepared.

AB - Cu2ZnSnS4 (CZTS) thin films were deposited by sol-gel spin coating using precursor solutions prepared with copper acetate, zinc acetate, tin chloride, and thiourea in methanol and ethylenediamine followed by sulfurization. Sol-gel precursor solutions were prepared with different amounts of sulfur and copper, and their effects on film growth, crystal properties, and optical properties of CZTS films were investigated. CZTS film thickness increased with the amount of metal salt in the precursor solution. This is attributed to an increase in solution viscosity and a decrease in the solution density/viscosity ratio. All CZTS thin films exhibited kesterite structures with absorption coefficients larger than 104 cm-1 in the visible region. Band gap energy increased with increasing amounts of sulfur and decreasing amounts of copper. The blue shift of the band gap is attributed to changes in the degree of p-d hybridization related to Cu d- and S p-levels. The role of sulfur and copper on Hall mobility and carrier concentration was investigated. By optimizing the metal salt ratio in the precursor, CZTS film with a resistivity of 5.3 × 10-2 Ωcm were prepared.

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