Effect of surface iron on gate oxide integrity and its removal from silicon surfaces

Heungsoo Park, C. R. Helms, Daehong Ko, M. Tran, B. B. Triplett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We found that effective removal of iron from silicon surfaces requires at least three steps (plus rinses), one of which must be an hydrofluoric acid solution. Even for wafers without intentional contamination, the chemical cleans before oxidation can strongly affect the photoconductivity recombination lifetime of the wafers: a very low lifetime for silicon wafers with SC1-last surfaces, a relatively high lifetime for silicon wafers with SC2-last surfaces, and a high lifetime for silicon wafers with HF-last surfaces. We also found that precipitates and stacking-fault like defects caused by iron contamination were formed underneath thermally-grown silicon oxide. We believe that the precipitates were iron silicides formed during the oxidation of iron-contaminated silicon.

Original languageEnglish
Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
PublisherPubl by Materials Research Society
Pages353-358
Number of pages6
ISBN (Print)1558992138
Publication statusPublished - 1993 Dec 1
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 131993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
Volume315
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period93/4/1393/4/15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Park, H., Helms, C. R., Ko, D., Tran, M., & Triplett, B. B. (1993). Effect of surface iron on gate oxide integrity and its removal from silicon surfaces. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 353-358). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.