Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon

Heungsoo Park, C. R. Helms, Daehong Ko

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.

Original languageEnglish
Pages (from-to)1724-1729
Number of pages6
JournalJournal of the Electrochemical Society
Volume145
Issue number5
DOIs
Publication statusPublished - 1998 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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