Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon

Heungsoo Park, C. R. Helms, Dae Hong Ko

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.

Original languageEnglish
Pages (from-to)1724-1729
Number of pages6
JournalJournal of the Electrochemical Society
Volume145
Issue number5
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Photoconductivity
Silicon
Iron
Hydrofluoric Acid
Degradation
Silicon steel
Hydrofluoric acid
Carrier lifetime
Silicon oxides
Precipitates
Cleaning
Contamination
Vacuum
Oxidation
Defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{874057e9c4b94a28ba9f7eaf05e0d39d,
title = "Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon",
abstract = "Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.",
author = "Heungsoo Park and Helms, {C. R.} and Ko, {Dae Hong}",
year = "1998",
month = "1",
day = "1",
doi = "10.1149/1.1838547",
language = "English",
volume = "145",
pages = "1724--1729",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon. / Park, Heungsoo; Helms, C. R.; Ko, Dae Hong.

In: Journal of the Electrochemical Society, Vol. 145, No. 5, 01.01.1998, p. 1724-1729.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon

AU - Park, Heungsoo

AU - Helms, C. R.

AU - Ko, Dae Hong

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.

AB - Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.

UR - http://www.scopus.com/inward/record.url?scp=0032075507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032075507&partnerID=8YFLogxK

U2 - 10.1149/1.1838547

DO - 10.1149/1.1838547

M3 - Article

AN - SCOPUS:0032075507

VL - 145

SP - 1724

EP - 1729

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -