Effect of surface oxidation on the material loss of ingaas in acidic solutions

Jihoon Na, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Indium gallium arsenide (InGaAs) is one of the candidate materials to overcome the physical limitation of Si due to its excellent electrical properties. The effect of surface oxidation on the etching characteristics of InGaAs surface in acidic solutions were investigated. InGaAs surfaces was etched in HCl/H2O2/H2O (CPM) and HNO3/H2O2/H2O (NPM), while there was no thickness change in diluted HCl or HNO3. The CPM-treated InGaAs surface had a lower etching rate than the NPM-treated one, while etching rate of oxidized layer was higher in diluted HCl than in HNO3. NaCl added in the NPM acts as an etching inhibitor for InGaAs and the etching rate was significantly suppressed. It is thought that Cl− anion inhibits the formation of hydroxyl radical (OH∙) or consumes OH∙ in acidic solution, inhibiting surface oxidation of InGaAs and suppressing its material loss.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
EditorsPaul W. Mertens, Kurt Wostyn, Marc Meuris, Marc Heyns
PublisherTrans Tech Publications Ltd
Pages89-94
Number of pages6
ISBN (Print)9783035738018
DOIs
Publication statusPublished - 2021
Event15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 - Mechelen, Belgium
Duration: 2021 Apr 122021 Apr 15

Publication series

NameSolid State Phenomena
Volume314 SSP
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Conference

Conference15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
CountryBelgium
CityMechelen
Period21/4/1221/4/15

Bibliographical note

Publisher Copyright:
© 2021 Trans Tech Publications Ltd, Switzerland.

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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