Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer

Jihoon Na; Sangwoo Lim

doi:10.1149/08506.0105ecst

Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer

Jihoon Na, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH₄OH treatment. The oxidation states increased after addition of H₂O₂ in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H₂O₂ in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.

Original language	English
Title of host publication	ECS Transactions
Editors	F. Roozeboom, P. J. Timans, K. Kakushima, H. Jagannathan, Z. Karim, E. P. Gusev, S. De Gendt
Publisher	Electrochemical Society Inc.
Pages	105-108
Number of pages	4
Edition	6
ISBN (Electronic)	9781607688341
ISBN (Print)	9781607688341
DOIs	https://doi.org/10.1149/08506.0105ecst
Publication status	Published - 2018
Event	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting - Seattle, United States Duration: 2018 May 13 → 2018 May 17

Publication series

Name	ECS Transactions
Number	6
Volume	85
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting
Country/Territory	United States
City	Seattle
Period	18/5/13 → 18/5/17

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/08506.0105ecst

Cite this

Na, J., & Lim, S. (2018). Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. In F. Roozeboom, P. J. Timans, K. Kakushima, H. Jagannathan, Z. Karim, E. P. Gusev, & S. De Gendt (Eds.), ECS Transactions (6 ed., pp. 105-108). (ECS Transactions; Vol. 85, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/08506.0105ecst

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title = "Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer",

abstract = "Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH4OH treatment. The oxidation states increased after addition of H2O2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H2O2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.",

author = "Jihoon Na and Sangwoo Lim",

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doi = "10.1149/08506.0105ecst",

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series = "ECS Transactions",

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editor = "F. Roozeboom and Timans, {P. J.} and K. Kakushima and H. Jagannathan and Z. Karim and Gusev, {E. P.} and {De Gendt}, S.",

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Na, J & Lim, S 2018, Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. in F Roozeboom, PJ Timans, K Kakushima, H Jagannathan, Z Karim, EP Gusev & S De Gendt (eds), ECS Transactions. 6 edn, ECS Transactions, no. 6, vol. 85, Electrochemical Society Inc., pp. 105-108, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting, Seattle, United States, 18/5/13. https://doi.org/10.1149/08506.0105ecst

Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. / Na, Jihoon; Lim, Sangwoo.

ECS Transactions. ed. / F. Roozeboom; P. J. Timans; K. Kakushima; H. Jagannathan; Z. Karim; E. P. Gusev; S. De Gendt. 6. ed. Electrochemical Society Inc., 2018. p. 105-108 (ECS Transactions; Vol. 85, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer

AU - Na, Jihoon

AU - Lim, Sangwoo

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2018

Y1 - 2018

N2 - Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH4OH treatment. The oxidation states increased after addition of H2O2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H2O2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.

AB - Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH4OH treatment. The oxidation states increased after addition of H2O2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H2O2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.

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PB - Electrochemical Society Inc.

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Y2 - 13 May 2018 through 17 May 2018

ER -

Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer

Abstract

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