Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH4OH treatment. The oxidation states increased after addition of H2O2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H2O2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.
|Title of host publication||ECS Transactions|
|Editors||F. Roozeboom, P. J. Timans, K. Kakushima, H. Jagannathan, Z. Karim, E. P. Gusev, S. De Gendt|
|Publisher||Electrochemical Society Inc.|
|Number of pages||4|
|Publication status||Published - 2018|
|Event||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting - Seattle, United States|
Duration: 2018 May 13 → 2018 May 17
|Conference||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting|
|Period||18/5/13 → 18/5/17|
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© The Electrochemical Society.
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