Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer

Jihoon Na, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH 4 OH treatment. The oxidation states increased after addition of H 2 O 2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H 2 O 2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.

Original languageEnglish
Title of host publicationECS Transactions
EditorsP. J. Timans, K. Kakushima, Z. Karim, E. P. Gusev, H. Jagannathan, S. De Gendt, F. Roozeboom
PublisherElectrochemical Society Inc.
Pages105-108
Number of pages4
Edition6
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting - Seattle, United States
Duration: 2018 May 132018 May 17

Publication series

NameECS Transactions
Number6
Volume85
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting
CountryUnited States
CitySeattle
Period18/5/1318/5/17

Fingerprint

Gallium arsenide
Indium
Oxides
Oxidation
Etching
Electron mobility
Oxidants
Dissolution

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Na, J., & Lim, S. (2018). Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. In P. J. Timans, K. Kakushima, Z. Karim, E. P. Gusev, H. Jagannathan, S. De Gendt, & F. Roozeboom (Eds.), ECS Transactions (6 ed., pp. 105-108). (ECS Transactions; Vol. 85, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/08506.0105ecst
Na, Jihoon ; Lim, Sangwoo. / Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. ECS Transactions. editor / P. J. Timans ; K. Kakushima ; Z. Karim ; E. P. Gusev ; H. Jagannathan ; S. De Gendt ; F. Roozeboom. 6. ed. Electrochemical Society Inc., 2018. pp. 105-108 (ECS Transactions; 6).
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Na, J & Lim, S 2018, Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. in PJ Timans, K Kakushima, Z Karim, EP Gusev, H Jagannathan, S De Gendt & F Roozeboom (eds), ECS Transactions. 6 edn, ECS Transactions, no. 6, vol. 85, Electrochemical Society Inc., pp. 105-108, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting, Seattle, United States, 18/5/13. https://doi.org/10.1149/08506.0105ecst

Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. / Na, Jihoon; Lim, Sangwoo.

ECS Transactions. ed. / P. J. Timans; K. Kakushima; Z. Karim; E. P. Gusev; H. Jagannathan; S. De Gendt; F. Roozeboom. 6. ed. Electrochemical Society Inc., 2018. p. 105-108 (ECS Transactions; Vol. 85, No. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH 4 OH treatment. The oxidation states increased after addition of H 2 O 2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H 2 O 2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.

AB - Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH 4 OH treatment. The oxidation states increased after addition of H 2 O 2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H 2 O 2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.

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Na J, Lim S. Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. In Timans PJ, Kakushima K, Karim Z, Gusev EP, Jagannathan H, De Gendt S, Roozeboom F, editors, ECS Transactions. 6 ed. Electrochemical Society Inc. 2018. p. 105-108. (ECS Transactions; 6). https://doi.org/10.1149/08506.0105ecst