Abstract
Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH 4 OH treatment. The oxidation states increased after addition of H 2 O 2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H 2 O 2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Editors | P. J. Timans, K. Kakushima, Z. Karim, E. P. Gusev, H. Jagannathan, S. De Gendt, F. Roozeboom |
| Publisher | Electrochemical Society Inc. |
| Pages | 105-108 |
| Number of pages | 4 |
| Edition | 6 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Event | International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting - Seattle, United States Duration: 2018 May 13 → 2018 May 17 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 6 |
| Volume | 85 |
| ISSN (Print) | 1938-6737 |
| ISSN (Electronic) | 1938-5862 |
Conference
| Conference | International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 - 233rd ECS Meeting |
|---|---|
| Country | United States |
| City | Seattle |
| Period | 18/5/13 → 18/5/17 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer. / Na, Jihoon; Lim, Sangwoo.
ECS Transactions. ed. / P. J. Timans; K. Kakushima; Z. Karim; E. P. Gusev; H. Jagannathan; S. De Gendt; F. Roozeboom. 6. ed. Electrochemical Society Inc., 2018. p. 105-108 (ECS Transactions; Vol. 85, No. 6).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effect of surface preparation on the residual oxide thickness and material loss of InGaAs layer
AU - Na, Jihoon
AU - Lim, Sangwoo
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH 4 OH treatment. The oxidation states increased after addition of H 2 O 2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H 2 O 2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.
AB - Indium gallium arsenide (InGaAs) can be introduced as a new channel material for improving device performance due to its high electron mobility. Surface preparation of InGaAs in wet chemical processes should be controlled because InGaAs is not as robust as Si against the wet chemistries. In this work, oxidation and etching behavior on InGaAs surface were investigated for acidic and basic treatments. It was observed that the oxidation states decreased after HCl treatment as compared to as-received InGaAs surface, while they increased after NH 4 OH treatment. The oxidation states increased after addition of H 2 O 2 in both acidic and basic solutions. It is suggested that dissolution of the oxidized InGaAs layer is dominant in acidic solution, while it is a rate limiting step in the basic solution. Therefore, the concentration of oxidant such as H 2 O 2 in acidic solution is important factor to determine residual oxidation and overall etching rate of InGaAs layer.
UR - http://www.scopus.com/inward/record.url?scp=85050163277&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050163277&partnerID=8YFLogxK
U2 - 10.1149/08506.0105ecst
DO - 10.1149/08506.0105ecst
M3 - Conference contribution
AN - SCOPUS:85050163277
T3 - ECS Transactions
SP - 105
EP - 108
BT - ECS Transactions
A2 - Timans, P. J.
A2 - Kakushima, K.
A2 - Karim, Z.
A2 - Gusev, E. P.
A2 - Jagannathan, H.
A2 - De Gendt, S.
A2 - Roozeboom, F.
PB - Electrochemical Society Inc.
ER -