Effect of temperature on silicon PIN photodiode radiation detectors

Han Soo Kim, Manhee Jeong, Young Soo Kim, Jang Ho Ha, Seong Yeon Cho

Research output: Contribution to journalArticle

Abstract

One of the noise sources of a semiconductor radiation detector is thermal noise, which degrades the performance, such as the energy resolution and unexpected random pulse signals. In this study, PIN photodiode radiation detectors, with different active areas were designed and fabricated for an experimental comparison of the energy resolutions for different temperatures and capacitances by using a Ba-133 calibration gamma-ray source. The experimental temperature was approximately in the range from -7 to 24 °C and was controlled by using a peltier device. The design considerations and the electrical characteristics, such as the I-V and the C-V characteristics, are also addressed.

Original languageEnglish
Pages (from-to)651-654
Number of pages4
JournalJournal of the Korean Physical Society
Volume64
Issue number5
DOIs
Publication statusPublished - 2014 Mar

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radiation detectors
photodiodes
thermal noise
silicon
capacitance
temperature
energy
pulses

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Han Soo ; Jeong, Manhee ; Kim, Young Soo ; Ha, Jang Ho ; Cho, Seong Yeon. / Effect of temperature on silicon PIN photodiode radiation detectors. In: Journal of the Korean Physical Society. 2014 ; Vol. 64, No. 5. pp. 651-654.
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Effect of temperature on silicon PIN photodiode radiation detectors. / Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Ha, Jang Ho; Cho, Seong Yeon.

In: Journal of the Korean Physical Society, Vol. 64, No. 5, 03.2014, p. 651-654.

Research output: Contribution to journalArticle

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