The properties of Al2O3 films were investigated after dipping the films in DI-water. The thickness of the films did not change due to formation of Al-hydroride layer on their surfaces. After dipping in DI-water, the dielectric constant of the Al2O3 film increased and this seems to be caused by a structural change of the film surface. Using this phenomenon, the overall dielectric constant which includes an Al 2O3 layer can be raised easily through a simple treatment.
|Number of pages||4|
|Journal||Journal of Ceramic Processing Research|
|Publication status||Published - 2008 Apr 3|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites