Abstract
The properties of Al2O3 films were investigated after dipping the films in DI-water. The thickness of the films did not change due to formation of Al-hydroride layer on their surfaces. After dipping in DI-water, the dielectric constant of the Al2O3 film increased and this seems to be caused by a structural change of the film surface. Using this phenomenon, the overall dielectric constant which includes an Al 2O3 layer can be raised easily through a simple treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 75-78 |
| Number of pages | 4 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 9 |
| Issue number | 1 |
| Publication status | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites