Abstract
The properties of Al2O3 films were investigated after dipping the films in DI-water. The thickness of the films did not change due to formation of Al-hydroride layer on their surfaces. After dipping in DI-water, the dielectric constant of the Al2O3 film increased and this seems to be caused by a structural change of the film surface. Using this phenomenon, the overall dielectric constant which includes an Al 2O3 layer can be raised easily through a simple treatment.
Original language | English |
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Pages (from-to) | 75-78 |
Number of pages | 4 |
Journal | Journal of Ceramic Processing Research |
Volume | 9 |
Issue number | 1 |
Publication status | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites