Abstract
The properties of Al2O3 films were investigated after dipping the films in DI-water. The thickness of the films did not change due to formation of Al-hydroride layer on their surfaces. After dipping in DI-water, the dielectric constant of the Al2O3 film increased and this seems to be caused by a structural change of the film surface. Using this phenomenon, the overall dielectric constant which includes an Al 2O3 layer can be raised easily through a simple treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 75-78 |
| Number of pages | 4 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 9 |
| Issue number | 1 |
| Publication status | Published - 2008 Apr 3 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
Cite this
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Effect of the hydration on the properties of an aluminum oxide film. / Jun, Jin Hyung; Kim, Hyo June; Choi, Doo Jin.
In: Journal of Ceramic Processing Research, Vol. 9, No. 1, 03.04.2008, p. 75-78.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of the hydration on the properties of an aluminum oxide film
AU - Jun, Jin Hyung
AU - Kim, Hyo June
AU - Choi, Doo Jin
PY - 2008/4/3
Y1 - 2008/4/3
N2 - The properties of Al2O3 films were investigated after dipping the films in DI-water. The thickness of the films did not change due to formation of Al-hydroride layer on their surfaces. After dipping in DI-water, the dielectric constant of the Al2O3 film increased and this seems to be caused by a structural change of the film surface. Using this phenomenon, the overall dielectric constant which includes an Al 2O3 layer can be raised easily through a simple treatment.
AB - The properties of Al2O3 films were investigated after dipping the films in DI-water. The thickness of the films did not change due to formation of Al-hydroride layer on their surfaces. After dipping in DI-water, the dielectric constant of the Al2O3 film increased and this seems to be caused by a structural change of the film surface. Using this phenomenon, the overall dielectric constant which includes an Al 2O3 layer can be raised easily through a simple treatment.
UR - http://www.scopus.com/inward/record.url?scp=41349083546&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=41349083546&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:41349083546
VL - 9
SP - 75
EP - 78
JO - Journal of Ceramic Processing Research
JF - Journal of Ceramic Processing Research
SN - 1229-9162
IS - 1
ER -