Effect of the Pb/Ti Source Ratio on the Crystallization of PbTiO3 Thin Films Grown by Metalorganic Chemical Vapor Deposition at Low Temperature of 400°C

Chae Hyun Wang, Doo Jin Choi

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16 Citations (Scopus)

Abstract

Crystalline PbTiO3 thin films were successfully deposited on (111)-oriented Pt/Ti/SiO2/Si and on (200)-oriented Pt/SiO2/Si by metalorganic chemical vapor deposition at a substrate temperature of 400°C, using a β-diketonate complex of Pb(tmhd)2 (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and titanium isopropoxide as source precursors. The dependence of the formation of crystalline PbTiO3 phase on the Pb/Ti input precursor ratio is qualitatively described. The structure of the films deposited at 400°C changed from amorphous to polycrystalline with an increase of the Pb/Ti ratio from 1.1 to 5.0, including a partially crystallized structure at some intermediate ratio. Partial crystallization of as-grown PbTiO3 film was analyzed by scanning electron microscopy, micro-Raman, and Auger electron spectroscopy measurements. It was found that the control of excess Pb precursor through a change in the Pb/Ti ratio is the key process parameter for the formation of crystalline PbTiO3 phase in the low-temperature MOCVD process.

Original languageEnglish
Pages (from-to)207-213
Number of pages7
JournalJournal of the American Ceramic Society
Volume84
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

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Metallorganic chemical vapor deposition
Crystallization
crystallization
Crystalline materials
Thin films
Auger electron spectroscopy
Temperature
titanium
Titanium
scanning electron microscopy
spectroscopy
substrate
electron
Scanning electron microscopy
Substrates
effect
chemical
temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this

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abstract = "Crystalline PbTiO3 thin films were successfully deposited on (111)-oriented Pt/Ti/SiO2/Si and on (200)-oriented Pt/SiO2/Si by metalorganic chemical vapor deposition at a substrate temperature of 400°C, using a β-diketonate complex of Pb(tmhd)2 (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and titanium isopropoxide as source precursors. The dependence of the formation of crystalline PbTiO3 phase on the Pb/Ti input precursor ratio is qualitatively described. The structure of the films deposited at 400°C changed from amorphous to polycrystalline with an increase of the Pb/Ti ratio from 1.1 to 5.0, including a partially crystallized structure at some intermediate ratio. Partial crystallization of as-grown PbTiO3 film was analyzed by scanning electron microscopy, micro-Raman, and Auger electron spectroscopy measurements. It was found that the control of excess Pb precursor through a change in the Pb/Ti ratio is the key process parameter for the formation of crystalline PbTiO3 phase in the low-temperature MOCVD process.",
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N2 - Crystalline PbTiO3 thin films were successfully deposited on (111)-oriented Pt/Ti/SiO2/Si and on (200)-oriented Pt/SiO2/Si by metalorganic chemical vapor deposition at a substrate temperature of 400°C, using a β-diketonate complex of Pb(tmhd)2 (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and titanium isopropoxide as source precursors. The dependence of the formation of crystalline PbTiO3 phase on the Pb/Ti input precursor ratio is qualitatively described. The structure of the films deposited at 400°C changed from amorphous to polycrystalline with an increase of the Pb/Ti ratio from 1.1 to 5.0, including a partially crystallized structure at some intermediate ratio. Partial crystallization of as-grown PbTiO3 film was analyzed by scanning electron microscopy, micro-Raman, and Auger electron spectroscopy measurements. It was found that the control of excess Pb precursor through a change in the Pb/Ti ratio is the key process parameter for the formation of crystalline PbTiO3 phase in the low-temperature MOCVD process.

AB - Crystalline PbTiO3 thin films were successfully deposited on (111)-oriented Pt/Ti/SiO2/Si and on (200)-oriented Pt/SiO2/Si by metalorganic chemical vapor deposition at a substrate temperature of 400°C, using a β-diketonate complex of Pb(tmhd)2 (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and titanium isopropoxide as source precursors. The dependence of the formation of crystalline PbTiO3 phase on the Pb/Ti input precursor ratio is qualitatively described. The structure of the films deposited at 400°C changed from amorphous to polycrystalline with an increase of the Pb/Ti ratio from 1.1 to 5.0, including a partially crystallized structure at some intermediate ratio. Partial crystallization of as-grown PbTiO3 film was analyzed by scanning electron microscopy, micro-Raman, and Auger electron spectroscopy measurements. It was found that the control of excess Pb precursor through a change in the Pb/Ti ratio is the key process parameter for the formation of crystalline PbTiO3 phase in the low-temperature MOCVD process.

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