Crystalline PbTiO3 thin films were successfully deposited on (111)-oriented Pt/Ti/SiO2/Si and on (200)-oriented Pt/SiO2/Si by metalorganic chemical vapor deposition at a substrate temperature of 400°C, using a β-diketonate complex of Pb(tmhd)2 (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and titanium isopropoxide as source precursors. The dependence of the formation of crystalline PbTiO3 phase on the Pb/Ti input precursor ratio is qualitatively described. The structure of the films deposited at 400°C changed from amorphous to polycrystalline with an increase of the Pb/Ti ratio from 1.1 to 5.0, including a partially crystallized structure at some intermediate ratio. Partial crystallization of as-grown PbTiO3 film was analyzed by scanning electron microscopy, micro-Raman, and Auger electron spectroscopy measurements. It was found that the control of excess Pb precursor through a change in the Pb/Ti ratio is the key process parameter for the formation of crystalline PbTiO3 phase in the low-temperature MOCVD process.
|Number of pages||7|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 2001 Jan|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry