Effect of the Pb/Ti Source Ratio on the Crystallization of PbTiO3 Thin Films Grown by Metalorganic Chemical Vapor Deposition at Low Temperature of 400°C

Chae Hyun Wang, Doo Jin Choi

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Crystalline PbTiO3 thin films were successfully deposited on (111)-oriented Pt/Ti/SiO2/Si and on (200)-oriented Pt/SiO2/Si by metalorganic chemical vapor deposition at a substrate temperature of 400°C, using a β-diketonate complex of Pb(tmhd)2 (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and titanium isopropoxide as source precursors. The dependence of the formation of crystalline PbTiO3 phase on the Pb/Ti input precursor ratio is qualitatively described. The structure of the films deposited at 400°C changed from amorphous to polycrystalline with an increase of the Pb/Ti ratio from 1.1 to 5.0, including a partially crystallized structure at some intermediate ratio. Partial crystallization of as-grown PbTiO3 film was analyzed by scanning electron microscopy, micro-Raman, and Auger electron spectroscopy measurements. It was found that the control of excess Pb precursor through a change in the Pb/Ti ratio is the key process parameter for the formation of crystalline PbTiO3 phase in the low-temperature MOCVD process.

Original languageEnglish
Pages (from-to)207-213
Number of pages7
JournalJournal of the American Ceramic Society
Issue number1
Publication statusPublished - 2001 Jan 1


All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

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