Abstract
Effect of substrate temperature on the properties of Ga-doped ZnO (GZO) films was investigated by pulsed DC magnetron sputtering with a rotating cylindrical target with an aim to establish suitable process conditions for their photovoltaic (PV) cell applications. Without formation of undesirable secondary oxide phases such as Ga 2O 3 and ZnGa 2O 4, the GZO film having mixed orientation at lower deposition temperature evolved into the c-axis oriented one with increasing deposition temperature to 230°C, which accompanied morphological evolution to vertically oriented dense columnar structure and improved doping efficiency. Correlated with this, crater-like surface texturing was possible only on the sample deposited at 230°C. Electrical resistivity and diffuse surface reflectance over the spectral range of 200-1200 nm of this GZO film after surface texturing were 8.73 × 10 -4 cm and 3.32%, respectively, indicating that the film has application potential as anti-reflection coating and front electrode of PV cells. Morphological features, surface texturing behavior, electrical and optical properties of the GZO films in this study suggest that this novel technique would be applicable to the fabrication of anti-reflection coating and front electrode of PV cells only when substrate temperature is sufficiently high.
| Original language | English |
|---|---|
| Pages (from-to) | 1423-1427 |
| Number of pages | 5 |
| Journal | Vacuum |
| Volume | 86 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2012 Apr 27 |
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All Science Journal Classification (ASJC) codes
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
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Effect of the substrate temperature on the properties of Ga-doped ZnO films for photovoltaic cell applications deposited by a pulsed DC magnetron sputtering with a rotating cylindrical target. / Park, Ji Hyeon; Shin, Beom Ki; Moon, Hong Man; Lee, Min Jung; Park, Kang Il; Ahn, Kyung Jun; Lee, Woong; Myoung, Jae Min.
In: Vacuum, Vol. 86, No. 10, 27.04.2012, p. 1423-1427.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of the substrate temperature on the properties of Ga-doped ZnO films for photovoltaic cell applications deposited by a pulsed DC magnetron sputtering with a rotating cylindrical target
AU - Park, Ji Hyeon
AU - Shin, Beom Ki
AU - Moon, Hong Man
AU - Lee, Min Jung
AU - Park, Kang Il
AU - Ahn, Kyung Jun
AU - Lee, Woong
AU - Myoung, Jae Min
PY - 2012/4/27
Y1 - 2012/4/27
N2 - Effect of substrate temperature on the properties of Ga-doped ZnO (GZO) films was investigated by pulsed DC magnetron sputtering with a rotating cylindrical target with an aim to establish suitable process conditions for their photovoltaic (PV) cell applications. Without formation of undesirable secondary oxide phases such as Ga 2O 3 and ZnGa 2O 4, the GZO film having mixed orientation at lower deposition temperature evolved into the c-axis oriented one with increasing deposition temperature to 230°C, which accompanied morphological evolution to vertically oriented dense columnar structure and improved doping efficiency. Correlated with this, crater-like surface texturing was possible only on the sample deposited at 230°C. Electrical resistivity and diffuse surface reflectance over the spectral range of 200-1200 nm of this GZO film after surface texturing were 8.73 × 10 -4 cm and 3.32%, respectively, indicating that the film has application potential as anti-reflection coating and front electrode of PV cells. Morphological features, surface texturing behavior, electrical and optical properties of the GZO films in this study suggest that this novel technique would be applicable to the fabrication of anti-reflection coating and front electrode of PV cells only when substrate temperature is sufficiently high.
AB - Effect of substrate temperature on the properties of Ga-doped ZnO (GZO) films was investigated by pulsed DC magnetron sputtering with a rotating cylindrical target with an aim to establish suitable process conditions for their photovoltaic (PV) cell applications. Without formation of undesirable secondary oxide phases such as Ga 2O 3 and ZnGa 2O 4, the GZO film having mixed orientation at lower deposition temperature evolved into the c-axis oriented one with increasing deposition temperature to 230°C, which accompanied morphological evolution to vertically oriented dense columnar structure and improved doping efficiency. Correlated with this, crater-like surface texturing was possible only on the sample deposited at 230°C. Electrical resistivity and diffuse surface reflectance over the spectral range of 200-1200 nm of this GZO film after surface texturing were 8.73 × 10 -4 cm and 3.32%, respectively, indicating that the film has application potential as anti-reflection coating and front electrode of PV cells. Morphological features, surface texturing behavior, electrical and optical properties of the GZO films in this study suggest that this novel technique would be applicable to the fabrication of anti-reflection coating and front electrode of PV cells only when substrate temperature is sufficiently high.
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U2 - 10.1016/j.vacuum.2012.03.002
DO - 10.1016/j.vacuum.2012.03.002
M3 - Article
AN - SCOPUS:84859121140
VL - 86
SP - 1423
EP - 1427
JO - Vacuum
JF - Vacuum
SN - 0042-207X
IS - 10
ER -