Effect of the substrate temperature on the properties of Ga-doped ZnO films for photovoltaic cell applications deposited by a pulsed DC magnetron sputtering with a rotating cylindrical target

Ji Hyeon Park, Beom Ki Shin, Hong Man Moon, Min Jung Lee, Kang Il Park, Kyung Jun Ahn, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Effect of substrate temperature on the properties of Ga-doped ZnO (GZO) films was investigated by pulsed DC magnetron sputtering with a rotating cylindrical target with an aim to establish suitable process conditions for their photovoltaic (PV) cell applications. Without formation of undesirable secondary oxide phases such as Ga 2O 3 and ZnGa 2O 4, the GZO film having mixed orientation at lower deposition temperature evolved into the c-axis oriented one with increasing deposition temperature to 230°C, which accompanied morphological evolution to vertically oriented dense columnar structure and improved doping efficiency. Correlated with this, crater-like surface texturing was possible only on the sample deposited at 230°C. Electrical resistivity and diffuse surface reflectance over the spectral range of 200-1200 nm of this GZO film after surface texturing were 8.73 × 10 -4 cm and 3.32%, respectively, indicating that the film has application potential as anti-reflection coating and front electrode of PV cells. Morphological features, surface texturing behavior, electrical and optical properties of the GZO films in this study suggest that this novel technique would be applicable to the fabrication of anti-reflection coating and front electrode of PV cells only when substrate temperature is sufficiently high.

Original languageEnglish
Pages (from-to)1423-1427
Number of pages5
JournalVacuum
Volume86
Issue number10
DOIs
Publication statusPublished - 2012 Apr 27

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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