Effect of the thickness and hydrogen treatment on the properties of Ga-doped ZnO transparent conductive films

Min Jung Lee, Jinhyong Lim, Jungsik Bang, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Combined effects of the thickness and hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential substitute for indium tin oxide transparent conductive oxide. In the as-deposited films, microstructural evolution initially improved the crystallinity up to the thickness of 160 nm accompanying enhanced electrical and optical properties, but further thickness increase resulted in the deterioration of these properties attributable to the development of ZnGa 2 O 4 and Ga 2 O 3 phases originating from the excessive amount of the Ga dopant. Post-annealing treatment of the GZO films in a hydrogen atmosphere improved the electrical and optical properties substantially through possible reduction of the oxide phases and passivation of the surfaces and grain boundaries. In this case, electrical and optical properties remained almost similar for the thickness above 160 nm indicating that there exists a certain optimal film thickness.

Original languageEnglish
Pages (from-to)3195-3200
Number of pages6
JournalApplied Surface Science
Volume255
Issue number5 PART 2
DOIs
Publication statusPublished - 2008 Dec 30

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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