Effect of thermal annealing on sputtered a-Si film

Do Young Kim, Hans S. Cho, Kyung Bae Park, Jang Yeon Kwon, Ji Sim Jung, Takashi Noguchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We studied amorphous silicon (a-Si) film deposited by sputtering as a precursor material for laser crystallization. By using radio frequency (r.f.) sputtering, a-Si film was deposited at room temperature. The a-Si film was crystallized by using an ultraviolet (UV) pulsed excimer laser, It was found that the a-Si film was delaminated, even at low laser energy densities below the energy density at which lateral grain growth could occur. However, when annealed for 1 hr at 500°C after deposition, the a-Si film endured without delamination up to and beyond the laser energy density at which lateral grain growth could occur. The grain size of the poly-Si film obtained by excimer laser annealing (ELA) after annealing the a-Si precursor film at 500°C was as large as 300 nm. We conclude that the 500°C thermal annealing prevents the delamination during laser irradiation due to a reduction of intrinsic stress as a result of densification of the film.

Original languageEnglish
Pages (from-to)S847-S850
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec 1

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silicon films
amorphous silicon
annealing
flux density
excimer lasers
lasers
sputtering
laser annealing
densification
pulsed lasers
radio frequencies
grain size
crystallization
irradiation
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, D. Y., Cho, H. S., Park, K. B., Kwon, J. Y., Jung, J. S., & Noguchi, T. (2004). Effect of thermal annealing on sputtered a-Si film. Journal of the Korean Physical Society, 45(SUPPL.), S847-S850.
Kim, Do Young ; Cho, Hans S. ; Park, Kyung Bae ; Kwon, Jang Yeon ; Jung, Ji Sim ; Noguchi, Takashi. / Effect of thermal annealing on sputtered a-Si film. In: Journal of the Korean Physical Society. 2004 ; Vol. 45, No. SUPPL. pp. S847-S850.
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Kim, DY, Cho, HS, Park, KB, Kwon, JY, Jung, JS & Noguchi, T 2004, 'Effect of thermal annealing on sputtered a-Si film', Journal of the Korean Physical Society, vol. 45, no. SUPPL., pp. S847-S850.

Effect of thermal annealing on sputtered a-Si film. / Kim, Do Young; Cho, Hans S.; Park, Kyung Bae; Kwon, Jang Yeon; Jung, Ji Sim; Noguchi, Takashi.

In: Journal of the Korean Physical Society, Vol. 45, No. SUPPL., 01.12.2004, p. S847-S850.

Research output: Contribution to journalArticle

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Kim DY, Cho HS, Park KB, Kwon JY, Jung JS, Noguchi T. Effect of thermal annealing on sputtered a-Si film. Journal of the Korean Physical Society. 2004 Dec 1;45(SUPPL.):S847-S850.