Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers

Sun Wook Kim, Minhyeong Lee, Hyunchul Jang, Hoo Jeong Lee, Dae Hong Ko

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1 Citation (Scopus)


In this study, in-situ phosphorus-doped Si1−xCx layers were epitaxially grown on blanket and patterned Si wafers using reduced pressure chemical vapor deposition (RPCVD). The effect of post-growth annealing on the strain and microstructures of the epilayers was investigated by high resolution X-ray diffraction (HR-XRD), Raman scattering, and high resolution transmission electron microscopy (HR-TEM) analyses. Structural investigation revealed that induced tensile strain became significantly less at temperatures over 900° as confirmed by Raman scattering measurements of Si–C vibration modes. Furthermore, strain relaxation and substantial Csub loss were found in XRD and Raman data of Si:C samples annealed at 1000° resulting from the generation of defects such as β-SiC precipitates or dislocations in Si1−xCx epilayers. Moreover, our microstructural analyses using TEM showed the formation of the β-SiC precipitates during rapid thermal annealing (RTA) over 900° and an increase in their number and size with annealing temperatures up to 1000°. Finally, we examined the impact of thermal annealing on the local strain and microstructures of patterned Si1−xCx samples with different structures. Our findings will provide greater insight into evaluating the strain states and microstructure of as-grown and annealed P-doped Si1−xCx films on both blanket and patterned Si wafers.

Original languageEnglish
Pages (from-to)799-808
Number of pages10
JournalJournal of Alloys and Compounds
Publication statusPublished - 2019 Jun 25


All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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