TY - JOUR
T1 - Effect of thickness on the microwave dielectric properties of (Mg 0.93Ca0.07)Tio3 thin films
AU - Lee, Byoung Duk
AU - Lee, Hong Ryul
AU - Yoon, Ki Hyun
AU - Cho, Yong S.
PY - 2004/4/15
Y1 - 2004/4/15
N2 - The effect of thickness on microwave dielectric properties of the (Mg 0.93Ca0.07)TiO3 (MCT) thin films prepared by the metalorganic solution deposition technique were investigated. It could be obtained a well-crystallized MCT thin films annealed at lower temperature of 800°C compared with the bulk ceramics. As the thickness of MCT films increased up to 2 μm, the dielectric constants of MCT films were found to increase from 21 to 30 due to the reduction of interfacial dead layers effect with low dielectric constant at both electrodes. Also, the dielectric losses of MCT films tended to decrease to 0.0004 ± 0.0001 with increasing the thickness up to 2 μm due to the reduced stresses. But, the temperature coefficients of dielectric constant (TCK) of MCT films measured at 6 GHz were about +10ppm/°C independent of thickness.
AB - The effect of thickness on microwave dielectric properties of the (Mg 0.93Ca0.07)TiO3 (MCT) thin films prepared by the metalorganic solution deposition technique were investigated. It could be obtained a well-crystallized MCT thin films annealed at lower temperature of 800°C compared with the bulk ceramics. As the thickness of MCT films increased up to 2 μm, the dielectric constants of MCT films were found to increase from 21 to 30 due to the reduction of interfacial dead layers effect with low dielectric constant at both electrodes. Also, the dielectric losses of MCT films tended to decrease to 0.0004 ± 0.0001 with increasing the thickness up to 2 μm due to the reduced stresses. But, the temperature coefficients of dielectric constant (TCK) of MCT films measured at 6 GHz were about +10ppm/°C independent of thickness.
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U2 - 10.1143/jjap.43.l513
DO - 10.1143/jjap.43.l513
M3 - Article
AN - SCOPUS:3042715639
VL - 43
SP - L513-L515
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 B
ER -