Effect of thin oxide capping on interlayer coupling in spin valves

J. Hong, K. Aoshima, J. Kane, K. Noma, H. Kanai

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Abstract

We controlled interlayer coupling from ferromagnetic to antiferromagnetic by appropriately capping spin valves with thin oxides. The interlayer coupling field was -16.6 Oe at a Cu-spacer thickness of 30 Å. The sign of coupling changed at a Cu-spacer thickness of 20 Å. The antiferromagnetic coupling achieved in this way allowed a reduction of thickness of the Cu spacer down to 20 Å without loss of good magnetic and electrical properties, and this led to a significant improvement in the MR response of the spin valves. The interlayer coupling field was only +8.6 Oe even at a Cu-spacer thickness of 20 Å. We attribute the improvement in MR response to less current shunting through the most conductive Cu layer and to enhanced specular scattering at the interface between the free and the oxide capping layer.

Original languageEnglish
Pages (from-to)2629-2631
Number of pages3
JournalIEEE Transactions on Magnetics
Volume36
Issue number5 I
DOIs
Publication statusPublished - 2000 Sep 1
Event2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada
Duration: 2000 Apr 92000 Apr 12

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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