Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization

Joon Seop Kwak, Hong Koo Baik, Jong Hoon Kim, Sung Man Lee, Hyuk Ju Ryu, Jung Ho Je

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Å) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films.

Original languageEnglish
Pages (from-to)6898-6903
Number of pages6
JournalJournal of Applied Physics
Volume85
Issue number9
DOIs
Publication statusPublished - 1999 May 1

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insertion
bombardment
ions
thermal instability
densification
grain boundaries

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kwak, Joon Seop ; Baik, Hong Koo ; Kim, Jong Hoon ; Lee, Sung Man ; Ryu, Hyuk Ju ; Je, Jung Ho. / Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 9. pp. 6898-6903.
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abstract = "In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 {\AA}) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films.",
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Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization. / Kwak, Joon Seop; Baik, Hong Koo; Kim, Jong Hoon; Lee, Sung Man; Ryu, Hyuk Ju; Je, Jung Ho.

In: Journal of Applied Physics, Vol. 85, No. 9, 01.05.1999, p. 6898-6903.

Research output: Contribution to journalArticle

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AU - Baik, Hong Koo

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