Abstract
In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Å) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films.
| Original language | English |
|---|---|
| Pages (from-to) | 6898-6903 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 85 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1999 May 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
}
Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization. / Kwak, Joon Seop; Baik, Hong Koo; Kim, Jong Hoon; Lee, Sung Man; Ryu, Hyuk Ju; Je, Jung Ho.
In: Journal of Applied Physics, Vol. 85, No. 9, 01.05.1999, p. 6898-6903.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization
AU - Kwak, Joon Seop
AU - Baik, Hong Koo
AU - Kim, Jong Hoon
AU - Lee, Sung Man
AU - Ryu, Hyuk Ju
AU - Je, Jung Ho
PY - 1999/5/1
Y1 - 1999/5/1
N2 - In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Å) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films.
AB - In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Å) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films.
UR - http://www.scopus.com/inward/record.url?scp=0011402417&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0011402417&partnerID=8YFLogxK
U2 - 10.1063/1.370209
DO - 10.1063/1.370209
M3 - Article
VL - 85
SP - 6898
EP - 6903
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
ER -