Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance

Young Wook Lee, Sun Jae Kim, Soo Yeon Lee, Woo Geun Lee, Kap Soo Yoon, Jae Woo Park, Jang Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We successfully fabricated a-IGZO TFTs with a TiCu sourcedrain (SD) in order to reduce the data-line resistance. SiNx passivation was used to protect the Cu from Cu-oxygen diffusion. The TFTs exhibited normal enhancement-mode characteristics compared to the TFT employing a Mo SD, which behaved like a conductor. Our experiments suggest that the TiCu SDs control the channel resistivity of the fabricated TFT lower than the Mo case. We found an indium-deficient IGZO layer under the Ti contact; this is thought to be the origin which reduces oxygen vacancy concentration in the channel.

Original languageEnglish
Pages (from-to)H126-H129
JournalElectrochemical and Solid-State Letters
Volume15
Issue number4
DOIs
Publication statusPublished - 2012 Feb 27

Fingerprint

Indium
Oxygen vacancies
Passivation
passivity
Oxygen
oxygen
indium
electric contacts
conductors
Experiments
electrical resistivity
augmentation

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Lee, Young Wook ; Kim, Sun Jae ; Lee, Soo Yeon ; Lee, Woo Geun ; Yoon, Kap Soo ; Park, Jae Woo ; Kwon, Jang Yeon ; Han, Min Koo. / Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance. In: Electrochemical and Solid-State Letters. 2012 ; Vol. 15, No. 4. pp. H126-H129.
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Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance. / Lee, Young Wook; Kim, Sun Jae; Lee, Soo Yeon; Lee, Woo Geun; Yoon, Kap Soo; Park, Jae Woo; Kwon, Jang Yeon; Han, Min Koo.

In: Electrochemical and Solid-State Letters, Vol. 15, No. 4, 27.02.2012, p. H126-H129.

Research output: Contribution to journalArticle

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