Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance

Young Wook Lee, Sun Jae Kim, Soo Yeon Lee, Woo Geun Lee, Kap Soo Yoon, Jae Woo Park, Jang Yeon Kwon, Min Koo Han

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We successfully fabricated a-IGZO TFTs with a TiCu sourcedrain (SD) in order to reduce the data-line resistance. SiNx passivation was used to protect the Cu from Cu-oxygen diffusion. The TFTs exhibited normal enhancement-mode characteristics compared to the TFT employing a Mo SD, which behaved like a conductor. Our experiments suggest that the TiCu SDs control the channel resistivity of the fabricated TFT lower than the Mo case. We found an indium-deficient IGZO layer under the Ti contact; this is thought to be the origin which reduces oxygen vacancy concentration in the channel.

Original languageEnglish
Pages (from-to)H126-H129
JournalElectrochemical and Solid-State Letters
Issue number4
Publication statusPublished - 2012 Feb 27


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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