Effect of tilted angle in trench structure on phase change memory operation using TCAD simulation

Y. H. Shin, S. M. Lee, I. Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

As the devices have faced the limit of shrinking, a lot of candidates rise to lead the next generation of device technology. One of the well-known candidates is a phase change memory (PCM) which is based on a chalcogenide material, called Ge2Sb2Te5 (GST). Principle of PCM operation is decided by changing the phase of GST thermodynamically. Thus, structures of a PCM cell such as keyhole and μ-trench are mainly used for Joule heating. However, in the process of making a trench, there is inevitably a difference between top and bottom aperture of the trench, which affects the electrical properties of PCM. In this study, we build a PCM cell structure using technology computer-aided design (TCAD) and analyze the effect of a tilted angle of the trench on the phase change memory operation.

Original languageEnglish
Pages (from-to)995-999
Number of pages5
JournalECS Transactions
Volume60
Issue number1
DOIs
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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