Effect of trench depth variation on phase change memory operation using TCAD simulation

S. M. Lee, Y. H. Shin, I. Yun

Research output: Contribution to journalArticle

Abstract

As one of non-volatile memory devices, the flash memory is widely used in various areas of applications, especially for mobile application. However, it has problems such as physical nano-scale limitation and reliability. Thus, researchers investigated nextgeneration memory device candidates which can overcome these problems. The phase change memory (PCM) is one of the attractive next-generation non-volatile memory candidates. As a phase change memory device, both keyhole and μ-trench structures are widely used. Thus, it is crucial to examine the electrical characteristic variation by structure modification. So, in this paper, we analyze the electrical effect of upper side trench depth variation on phase change memory operation.

Original languageEnglish
Pages (from-to)989-994
Number of pages6
JournalECS Transactions
Volume60
Issue number1
DOIs
Publication statusPublished - 2014

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Phase change memory
Data storage equipment
Flash memory

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

@article{2783ba81140b45f2baeef4d7b7df0491,
title = "Effect of trench depth variation on phase change memory operation using TCAD simulation",
abstract = "As one of non-volatile memory devices, the flash memory is widely used in various areas of applications, especially for mobile application. However, it has problems such as physical nano-scale limitation and reliability. Thus, researchers investigated nextgeneration memory device candidates which can overcome these problems. The phase change memory (PCM) is one of the attractive next-generation non-volatile memory candidates. As a phase change memory device, both keyhole and μ-trench structures are widely used. Thus, it is crucial to examine the electrical characteristic variation by structure modification. So, in this paper, we analyze the electrical effect of upper side trench depth variation on phase change memory operation.",
author = "Lee, {S. M.} and Shin, {Y. H.} and I. Yun",
year = "2014",
doi = "10.1149/06001.0989ecst",
language = "English",
volume = "60",
pages = "989--994",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

Effect of trench depth variation on phase change memory operation using TCAD simulation. / Lee, S. M.; Shin, Y. H.; Yun, I.

In: ECS Transactions, Vol. 60, No. 1, 2014, p. 989-994.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of trench depth variation on phase change memory operation using TCAD simulation

AU - Lee, S. M.

AU - Shin, Y. H.

AU - Yun, I.

PY - 2014

Y1 - 2014

N2 - As one of non-volatile memory devices, the flash memory is widely used in various areas of applications, especially for mobile application. However, it has problems such as physical nano-scale limitation and reliability. Thus, researchers investigated nextgeneration memory device candidates which can overcome these problems. The phase change memory (PCM) is one of the attractive next-generation non-volatile memory candidates. As a phase change memory device, both keyhole and μ-trench structures are widely used. Thus, it is crucial to examine the electrical characteristic variation by structure modification. So, in this paper, we analyze the electrical effect of upper side trench depth variation on phase change memory operation.

AB - As one of non-volatile memory devices, the flash memory is widely used in various areas of applications, especially for mobile application. However, it has problems such as physical nano-scale limitation and reliability. Thus, researchers investigated nextgeneration memory device candidates which can overcome these problems. The phase change memory (PCM) is one of the attractive next-generation non-volatile memory candidates. As a phase change memory device, both keyhole and μ-trench structures are widely used. Thus, it is crucial to examine the electrical characteristic variation by structure modification. So, in this paper, we analyze the electrical effect of upper side trench depth variation on phase change memory operation.

UR - http://www.scopus.com/inward/record.url?scp=84904958348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904958348&partnerID=8YFLogxK

U2 - 10.1149/06001.0989ecst

DO - 10.1149/06001.0989ecst

M3 - Article

AN - SCOPUS:84904958348

VL - 60

SP - 989

EP - 994

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 1

ER -