Effect of trench depth variation on phase change memory operation using TCAD simulation

As one of non-volatile memory devices, the flash memory is widely used in various areas of applications, especially for mobile application. However, it has problems such as physical nano-scale limitation and reliability. Thus, researchers investigated nextgeneration memory device candidates which can overcome these problems. The phase change memory (PCM) is one of the attractive next-generation non-volatile memory candidates. As a phase change memory device, both keyhole and μ-trench structures are widely used. Thus, it is crucial to examine the electrical characteristic variation by structure modification. So, in this paper, we analyze the electrical effect of upper side trench depth variation on phase change memory operation.