Effect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co40Fe40B20

Soogil Lee, Sanghoon Kim, Jangyup Son, Jongin Cha, Sachin Pathak, Jongill Hong

Research output: Contribution to journalArticle

Abstract

We found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co40Fe40B20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance-area product (RsA) of this STC on n-type Ge after postannealing at 350 °C (1.97 ' 106&m2) is nearly one order of magnitude larger than that of the as-deposited one (2.34 ' 105&m2). The dependence of RsA on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.

Original languageEnglish
Article number090303
JournalJapanese Journal of Applied Physics
Volume55
Issue number9
DOIs
Publication statusPublished - 2016 Sep 1

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Spin polarization
tunnels
Tunnels
polarization
Contact resistance
Epitaxial growth
products
contact resistance
templates
scaling
augmentation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, Soogil ; Kim, Sanghoon ; Son, Jangyup ; Cha, Jongin ; Pathak, Sachin ; Hong, Jongill. / Effect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co40Fe40B20. In: Japanese Journal of Applied Physics. 2016 ; Vol. 55, No. 9.
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Effect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co40Fe40B20. / Lee, Soogil; Kim, Sanghoon; Son, Jangyup; Cha, Jongin; Pathak, Sachin; Hong, Jongill.

In: Japanese Journal of Applied Physics, Vol. 55, No. 9, 090303, 01.09.2016.

Research output: Contribution to journalArticle

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AU - Pathak, Sachin

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