We found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co40Fe40B20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance-area product (RsA) of this STC on n-type Ge after postannealing at 350 °C (1.97 ' 106&m2) is nearly one order of magnitude larger than that of the as-deposited one (2.34 ' 105&m2). The dependence of RsA on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.
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Acknowledgments The authors thank Dr. Yun Chang Park (NNFC) for help with XHRTEM observations and Ube Material Industries Ltd., Japan for providing single-crystal-like MgO targets. This research was supported in part by the Future Semiconductor Device Technology Development Program (10044723) funded by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070465), and by the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP) (NRF-2014R1A2A1A11050290).
© 2016 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)