Effect of W doping on bipolar resistive switching behavior of TiN/W

NbO x/Pt device

Kyumin Lee, Jonggi Kim, Sunghoon Lee, Sunghoon Park, Hyunchul Sohn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In our study, resistive switching characteristics of TiN/ W:NbO x/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbO x films. The W:NbO x specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbO x. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbO x.

Original languageEnglish
Title of host publication2012 IEEE International Interconnect Technology Conference, IITC 2012
DOIs
Publication statusPublished - 2012 Oct 1
Event2012 IEEE International Interconnect Technology Conference, IITC 2012 - San Jose, CA, United States
Duration: 2012 Jun 42012 Jun 6

Other

Other2012 IEEE International Interconnect Technology Conference, IITC 2012
CountryUnited States
CitySan Jose, CA
Period12/6/412/6/6

Fingerprint

Doping (additives)
Oxygen vacancies
Tungsten

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lee, K., Kim, J., Lee, S., Park, S., & Sohn, H. (2012). Effect of W doping on bipolar resistive switching behavior of TiN/W: NbO x/Pt device. In 2012 IEEE International Interconnect Technology Conference, IITC 2012 [6251647] https://doi.org/10.1109/IITC.2012.6251647
Lee, Kyumin ; Kim, Jonggi ; Lee, Sunghoon ; Park, Sunghoon ; Sohn, Hyunchul. / Effect of W doping on bipolar resistive switching behavior of TiN/W : NbO x/Pt device. 2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012.
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Lee, K, Kim, J, Lee, S, Park, S & Sohn, H 2012, Effect of W doping on bipolar resistive switching behavior of TiN/W: NbO x/Pt device. in 2012 IEEE International Interconnect Technology Conference, IITC 2012., 6251647, 2012 IEEE International Interconnect Technology Conference, IITC 2012, San Jose, CA, United States, 12/6/4. https://doi.org/10.1109/IITC.2012.6251647

Effect of W doping on bipolar resistive switching behavior of TiN/W : NbO x/Pt device. / Lee, Kyumin; Kim, Jonggi; Lee, Sunghoon; Park, Sunghoon; Sohn, Hyunchul.

2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. 6251647.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In our study, resistive switching characteristics of TiN/ W:NbO x/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbO x films. The W:NbO x specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbO x. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbO x.

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Lee K, Kim J, Lee S, Park S, Sohn H. Effect of W doping on bipolar resistive switching behavior of TiN/W: NbO x/Pt device. In 2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. 6251647 https://doi.org/10.1109/IITC.2012.6251647