Effect of wafer resistivity and HF concentration on the formation of vertically aligned porous silicon

Yonughwan Lee, Jonghyuck Lee, Yonggun Shul, Sangwoo Lim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this study, the mechanism of vertically aligned porous silicon formation was examined. Silicon wafers with various resistivities and electrolytes containing different HF concentrations were used to explain porous silicon formation by the reaction at the silicon/electrolyte interface. Total pore volume increased proportionally to the current applied and anodization time. As the concentration of HF increased, pore depth and total pore volume formed in silicon anodization increased, then decreased beyond the optimum point. At a given applied current, total pore volume formed by anodization increased with an increase in resistivity of silicon wafer, but then decreased. From the mechanism of silicon etching and schematic isoetch contour of silicon suggested in this study, it is concluded that the formation of porous silicon is determined by an accumulation of F- near the silicon/electrolyte interface in silicon anodization.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalJournal of Industrial and Engineering Chemistry
Volume14
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

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Porous silicon
Silicon
Electrolytes
Silicon wafers
Schematic diagrams
Etching

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

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Effect of wafer resistivity and HF concentration on the formation of vertically aligned porous silicon. / Lee, Yonughwan; Lee, Jonghyuck; Shul, Yonggun; Lim, Sangwoo.

In: Journal of Industrial and Engineering Chemistry, Vol. 14, No. 1, 01.01.2008, p. 105-109.

Research output: Contribution to journalArticle

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