Effect of water treatment on transparent semiconductor InZnSnO thin films

Joon Chul Moon; Funda Aksoy; Honglyoul Ju; Zhi Liu; Bongjin Simon Mun

doi:10.1016/j.cap.2010.09.004

Effect of water treatment on transparent semiconductor InZnSnO thin films

Joon Chul Moon, Funda Aksoy, Honglyoul Ju, Zhi Liu, Bongjin Simon Mun

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effects of water exposure on InZnSnO transparent thin films are reported. After the immersion of InZnSnO films under de-ionized water, an enrichment of In (and Sn) and a reduction of Zn are found on the surface, probed with X-ray photoelectron spectroscopy (XPS). In addition, O 1s core-level XPS spectra show a presence of hydroxyl after the water immersion process, supporting that the adsorption of H₂O to InZnSnO surface may induces partial negative charge to surface with either molecular to hydroxyl forms.

Original language	English
Pages (from-to)	513-516
Number of pages	4
Journal	Current Applied Physics
Volume	11
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2010.09.004
Publication status	Published - 2011 May

Bibliographical note

Funding Information:
This work was supported by the research fund of Hanyang University ( HY-20090546-N )

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2010.09.004

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title = "Effect of water treatment on transparent semiconductor InZnSnO thin films",

abstract = "The effects of water exposure on InZnSnO transparent thin films are reported. After the immersion of InZnSnO films under de-ionized water, an enrichment of In (and Sn) and a reduction of Zn are found on the surface, probed with X-ray photoelectron spectroscopy (XPS). In addition, O 1s core-level XPS spectra show a presence of hydroxyl after the water immersion process, supporting that the adsorption of H2O to InZnSnO surface may induces partial negative charge to surface with either molecular to hydroxyl forms.",

author = "Moon, {Joon Chul} and Funda Aksoy and Honglyoul Ju and Zhi Liu and Mun, {Bongjin Simon}",

note = "Funding Information: This work was supported by the research fund of Hanyang University ( HY-20090546-N )",

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doi = "10.1016/j.cap.2010.09.004",

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AU - Moon, Joon Chul

AU - Aksoy, Funda

AU - Ju, Honglyoul

AU - Liu, Zhi

AU - Mun, Bongjin Simon

N1 - Funding Information: This work was supported by the research fund of Hanyang University ( HY-20090546-N )

PY - 2011/5

Y1 - 2011/5

N2 - The effects of water exposure on InZnSnO transparent thin films are reported. After the immersion of InZnSnO films under de-ionized water, an enrichment of In (and Sn) and a reduction of Zn are found on the surface, probed with X-ray photoelectron spectroscopy (XPS). In addition, O 1s core-level XPS spectra show a presence of hydroxyl after the water immersion process, supporting that the adsorption of H2O to InZnSnO surface may induces partial negative charge to surface with either molecular to hydroxyl forms.

AB - The effects of water exposure on InZnSnO transparent thin films are reported. After the immersion of InZnSnO films under de-ionized water, an enrichment of In (and Sn) and a reduction of Zn are found on the surface, probed with X-ray photoelectron spectroscopy (XPS). In addition, O 1s core-level XPS spectra show a presence of hydroxyl after the water immersion process, supporting that the adsorption of H2O to InZnSnO surface may induces partial negative charge to surface with either molecular to hydroxyl forms.

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DO - 10.1016/j.cap.2010.09.004

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JO - Current Applied Physics

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Effect of water treatment on transparent semiconductor InZnSnO thin films

Abstract

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All Science Journal Classification (ASJC) codes

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