Abstract
The structural effect on field emission property of the SiC whiskers of 80 nm diameter grown by chemical vapor deposition was analyzed. The coating microstructure and surface morphology were investigated using scanning electron microscopy (SEM). The field emission properties were affected by the band gap, electron affinity and microstructral morphology. The results show that the sharper the morphology of the emission tip, the better is the electron emission.
Original language | English |
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Pages (from-to) | 3025-3026 |
Number of pages | 2 |
Journal | Journal of Materials Science |
Volume | 40 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2005 Jun |
Bibliographical note
Funding Information:This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsys-tem Center (IMC; http://www.microsystem.re.kr), the first launched center of ’21st Century Frontier R & D Program’ sponsored by Korean Ministry Of Science and Technology.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering