Effect of whisker diameter on field emission properties of silicon carbide whiskers grown by chemical vapor deposition

Dong Chan Lim; Byoung In Joo; Jin Hyung Jun; Doo Jin Choi

doi:10.1007/s10853-005-2388-7

Effect of whisker diameter on field emission properties of silicon carbide whiskers grown by chemical vapor deposition

Dong Chan Lim, Byoung In Joo, Jin Hyung Jun, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The structural effect on field emission property of the SiC whiskers of 80 nm diameter grown by chemical vapor deposition was analyzed. The coating microstructure and surface morphology were investigated using scanning electron microscopy (SEM). The field emission properties were affected by the band gap, electron affinity and microstructral morphology. The results show that the sharper the morphology of the emission tip, the better is the electron emission.

Original language	English
Pages (from-to)	3025-3026
Number of pages	2
Journal	Journal of Materials Science
Volume	40
Issue number	11
DOIs	https://doi.org/10.1007/s10853-005-2388-7
Publication status	Published - 2005 Jun

Bibliographical note

Funding Information:
This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsys-tem Center (IMC; http://www.microsystem.re.kr), the first launched center of ’21st Century Frontier R & D Program’ sponsored by Korean Ministry Of Science and Technology.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1007/s10853-005-2388-7

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@article{13a7b941190645548508c460e606ac23,

title = "Effect of whisker diameter on field emission properties of silicon carbide whiskers grown by chemical vapor deposition",

abstract = "The structural effect on field emission property of the SiC whiskers of 80 nm diameter grown by chemical vapor deposition was analyzed. The coating microstructure and surface morphology were investigated using scanning electron microscopy (SEM). The field emission properties were affected by the band gap, electron affinity and microstructral morphology. The results show that the sharper the morphology of the emission tip, the better is the electron emission.",

author = "Lim, {Dong Chan} and Joo, {Byoung In} and Jun, {Jin Hyung} and Choi, {Doo Jin}",

note = "Funding Information: This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsys-tem Center (IMC; http://www.microsystem.re.kr), the first launched center of {\textquoteright}21st Century Frontier R & D Program{\textquoteright} sponsored by Korean Ministry Of Science and Technology.",

year = "2005",

month = jun,

doi = "10.1007/s10853-005-2388-7",

language = "English",

volume = "40",

pages = "3025--3026",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer Netherlands",

number = "11",

}

TY - JOUR

T1 - Effect of whisker diameter on field emission properties of silicon carbide whiskers grown by chemical vapor deposition

AU - Lim, Dong Chan

AU - Joo, Byoung In

AU - Jun, Jin Hyung

AU - Choi, Doo Jin

N1 - Funding Information: This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsys-tem Center (IMC; http://www.microsystem.re.kr), the first launched center of ’21st Century Frontier R & D Program’ sponsored by Korean Ministry Of Science and Technology.

PY - 2005/6

Y1 - 2005/6

N2 - The structural effect on field emission property of the SiC whiskers of 80 nm diameter grown by chemical vapor deposition was analyzed. The coating microstructure and surface morphology were investigated using scanning electron microscopy (SEM). The field emission properties were affected by the band gap, electron affinity and microstructral morphology. The results show that the sharper the morphology of the emission tip, the better is the electron emission.

AB - The structural effect on field emission property of the SiC whiskers of 80 nm diameter grown by chemical vapor deposition was analyzed. The coating microstructure and surface morphology were investigated using scanning electron microscopy (SEM). The field emission properties were affected by the band gap, electron affinity and microstructral morphology. The results show that the sharper the morphology of the emission tip, the better is the electron emission.

UR - http://www.scopus.com/inward/record.url?scp=21644460949&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644460949&partnerID=8YFLogxK

U2 - 10.1007/s10853-005-2388-7

DO - 10.1007/s10853-005-2388-7

M3 - Article

AN - SCOPUS:21644460949

VL - 40

SP - 3025

EP - 3026

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 11

ER -

Effect of whisker diameter on field emission properties of silicon carbide whiskers grown by chemical vapor deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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