Abstract
The structural effect on field emission property of the SiC whiskers of 80 nm diameter grown by chemical vapor deposition was analyzed. The coating microstructure and surface morphology were investigated using scanning electron microscopy (SEM). The field emission properties were affected by the band gap, electron affinity and microstructral morphology. The results show that the sharper the morphology of the emission tip, the better is the electron emission.
| Original language | English |
|---|---|
| Pages (from-to) | 3025-3026 |
| Number of pages | 2 |
| Journal | Journal of Materials Science |
| Volume | 40 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2005 Jun 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Lim, D. C., Joo, B. I., Jun, J. H., & Choi, D. J. (2005). Effect of whisker diameter on field emission properties of silicon carbide whiskers grown by chemical vapor deposition. Journal of Materials Science, 40(11), 3025-3026. https://doi.org/10.1007/s10853-005-2388-7