Effect of whisker diameter on field emission properties of silicon carbide whiskers grown by chemical vapor deposition

Dong Chan Lim, Byoung In Joo, Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The structural effect on field emission property of the SiC whiskers of 80 nm diameter grown by chemical vapor deposition was analyzed. The coating microstructure and surface morphology were investigated using scanning electron microscopy (SEM). The field emission properties were affected by the band gap, electron affinity and microstructral morphology. The results show that the sharper the morphology of the emission tip, the better is the electron emission.

Original languageEnglish
Pages (from-to)3025-3026
Number of pages2
JournalJournal of Materials Science
Volume40
Issue number11
DOIs
Publication statusPublished - 2005 Jun

Bibliographical note

Funding Information:
This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsys-tem Center (IMC; http://www.microsystem.re.kr), the first launched center of ’21st Century Frontier R & D Program’ sponsored by Korean Ministry Of Science and Technology.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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