Effect of wire temperature on the microstructural evolution of Si films in hot-wire chemical vapor deposition for digital display and photovoltaic devices

Jean Ho Song, Byung Du Ahn, Seung Doh Shin, Nong Moon Hwang, Hyun Jae Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The formation of crystalline phase in Si by hot-wire chemical vapor deposition (HWCVD) was investigated, focusing on the microstructural evolution as a function of hot-wire temperature. The microstructure of films deposited on a Si wafer was compared between hot-wire temperatures of 1590, 1670, and 1800 °C. A heavily twinned structure was observed at the wire temperature of 1670 °C, which resulted in the apparent intensity peak of (1 1 1) hexagonal-closed packed (HCP) crystalline Si from a typical face-centered cubic (FCC) crystalline Si structure in the X-ray diffraction analysis. The twin-related HCP crystalline phase was markedly diminished at 1800 °C and hardly observed at 1590 °C. The observed deposition behavior was approached by the effect of the wire temperature on the size of charged nanoparticles formed in the gas phase in the HWCVD process.

Original languageEnglish
Pages (from-to)324-328
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume93
Issue number3
DOIs
Publication statusPublished - 2009 Mar 1

Fingerprint

Microstructural evolution
Chemical vapor deposition
Display devices
Wire
Crystalline materials
Temperature
X ray diffraction analysis
Gases
Nanoparticles
Microstructure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

@article{dbd0a68ad5364f3387c078fa47f11bae,
title = "Effect of wire temperature on the microstructural evolution of Si films in hot-wire chemical vapor deposition for digital display and photovoltaic devices",
abstract = "The formation of crystalline phase in Si by hot-wire chemical vapor deposition (HWCVD) was investigated, focusing on the microstructural evolution as a function of hot-wire temperature. The microstructure of films deposited on a Si wafer was compared between hot-wire temperatures of 1590, 1670, and 1800 °C. A heavily twinned structure was observed at the wire temperature of 1670 °C, which resulted in the apparent intensity peak of (1 1 1) hexagonal-closed packed (HCP) crystalline Si from a typical face-centered cubic (FCC) crystalline Si structure in the X-ray diffraction analysis. The twin-related HCP crystalline phase was markedly diminished at 1800 °C and hardly observed at 1590 °C. The observed deposition behavior was approached by the effect of the wire temperature on the size of charged nanoparticles formed in the gas phase in the HWCVD process.",
author = "Song, {Jean Ho} and Ahn, {Byung Du} and Shin, {Seung Doh} and Hwang, {Nong Moon} and Kim, {Hyun Jae}",
year = "2009",
month = "3",
day = "1",
doi = "10.1016/j.solmat.2008.11.006",
language = "English",
volume = "93",
pages = "324--328",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "3",

}

Effect of wire temperature on the microstructural evolution of Si films in hot-wire chemical vapor deposition for digital display and photovoltaic devices. / Song, Jean Ho; Ahn, Byung Du; Shin, Seung Doh; Hwang, Nong Moon; Kim, Hyun Jae.

In: Solar Energy Materials and Solar Cells, Vol. 93, No. 3, 01.03.2009, p. 324-328.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of wire temperature on the microstructural evolution of Si films in hot-wire chemical vapor deposition for digital display and photovoltaic devices

AU - Song, Jean Ho

AU - Ahn, Byung Du

AU - Shin, Seung Doh

AU - Hwang, Nong Moon

AU - Kim, Hyun Jae

PY - 2009/3/1

Y1 - 2009/3/1

N2 - The formation of crystalline phase in Si by hot-wire chemical vapor deposition (HWCVD) was investigated, focusing on the microstructural evolution as a function of hot-wire temperature. The microstructure of films deposited on a Si wafer was compared between hot-wire temperatures of 1590, 1670, and 1800 °C. A heavily twinned structure was observed at the wire temperature of 1670 °C, which resulted in the apparent intensity peak of (1 1 1) hexagonal-closed packed (HCP) crystalline Si from a typical face-centered cubic (FCC) crystalline Si structure in the X-ray diffraction analysis. The twin-related HCP crystalline phase was markedly diminished at 1800 °C and hardly observed at 1590 °C. The observed deposition behavior was approached by the effect of the wire temperature on the size of charged nanoparticles formed in the gas phase in the HWCVD process.

AB - The formation of crystalline phase in Si by hot-wire chemical vapor deposition (HWCVD) was investigated, focusing on the microstructural evolution as a function of hot-wire temperature. The microstructure of films deposited on a Si wafer was compared between hot-wire temperatures of 1590, 1670, and 1800 °C. A heavily twinned structure was observed at the wire temperature of 1670 °C, which resulted in the apparent intensity peak of (1 1 1) hexagonal-closed packed (HCP) crystalline Si from a typical face-centered cubic (FCC) crystalline Si structure in the X-ray diffraction analysis. The twin-related HCP crystalline phase was markedly diminished at 1800 °C and hardly observed at 1590 °C. The observed deposition behavior was approached by the effect of the wire temperature on the size of charged nanoparticles formed in the gas phase in the HWCVD process.

UR - http://www.scopus.com/inward/record.url?scp=58549092957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58549092957&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2008.11.006

DO - 10.1016/j.solmat.2008.11.006

M3 - Article

AN - SCOPUS:58549092957

VL - 93

SP - 324

EP - 328

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 3

ER -