The formation of crystalline phase in Si by hot-wire chemical vapor deposition (HWCVD) was investigated, focusing on the microstructural evolution as a function of hot-wire temperature. The microstructure of films deposited on a Si wafer was compared between hot-wire temperatures of 1590, 1670, and 1800 °C. A heavily twinned structure was observed at the wire temperature of 1670 °C, which resulted in the apparent intensity peak of (1 1 1) hexagonal-closed packed (HCP) crystalline Si from a typical face-centered cubic (FCC) crystalline Si structure in the X-ray diffraction analysis. The twin-related HCP crystalline phase was markedly diminished at 1800 °C and hardly observed at 1590 °C. The observed deposition behavior was approached by the effect of the wire temperature on the size of charged nanoparticles formed in the gas phase in the HWCVD process.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory Program funded by the Ministry of Science and Technology (No. M10600000159-06J0000-15910), the Nano-Systems Institute-National Core Research Center (NSI-NCRC) program of the KOSEF, and the Korea Research Foundation Grant funded by the Korea government (MOEHRD) (KRF-2006-311-8-1450).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films