Thin-film transistors (TFTs) with a ZrZnSnO (ZZTO) channel layer were fabricated using a solution process. As-prepared ZnSnO (ZTO) TFTs had a large off-current. However, as the content of Zr ions increased in ZTO, the threshold voltage shifted, and the off-current in the TFTs decreased. Because Zr has a lower standard electrode potential, it is more readily oxidized than Sn or Zn. Thus, Zr acted as an effective carrier suppressor in the ZTO system and a ZZTO TFT with a high mobility of a 4.02 cm2 V-1 s-1 and a large on/off ratio of over 106 was achieved.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant, funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0(2007)].
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)