Effect of Zr addition on ZnSnO thin-film transistors using a solution process

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

129 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with a ZrZnSnO (ZZTO) channel layer were fabricated using a solution process. As-prepared ZnSnO (ZTO) TFTs had a large off-current. However, as the content of Zr ions increased in ZTO, the threshold voltage shifted, and the off-current in the TFTs decreased. Because Zr has a lower standard electrode potential, it is more readily oxidized than Sn or Zn. Thus, Zr acted as an effective carrier suppressor in the ZTO system and a ZZTO TFT with a high mobility of a 4.02 cm2 V-1 s-1 and a large on/off ratio of over 106 was achieved.

Original languageEnglish
Article number233502
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
Publication statusPublished - 2010 Dec 6

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transistors
thin films
suppressors
threshold voltage
electrodes
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Rim, You Seung ; Kim, Dong Lim ; Jeong, Woong Hee ; Kim, Hyun Jae. / Effect of Zr addition on ZnSnO thin-film transistors using a solution process. In: Applied Physics Letters. 2010 ; Vol. 97, No. 23.
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Effect of Zr addition on ZnSnO thin-film transistors using a solution process. / Rim, You Seung; Kim, Dong Lim; Jeong, Woong Hee; Kim, Hyun Jae.

In: Applied Physics Letters, Vol. 97, No. 23, 233502, 06.12.2010.

Research output: Contribution to journalArticle

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