Effect of Zr addition on ZnSnO thin-film transistors using a solution process

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

148 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with a ZrZnSnO (ZZTO) channel layer were fabricated using a solution process. As-prepared ZnSnO (ZTO) TFTs had a large off-current. However, as the content of Zr ions increased in ZTO, the threshold voltage shifted, and the off-current in the TFTs decreased. Because Zr has a lower standard electrode potential, it is more readily oxidized than Sn or Zn. Thus, Zr acted as an effective carrier suppressor in the ZTO system and a ZZTO TFT with a high mobility of a 4.02 cm2 V-1 s-1 and a large on/off ratio of over 106 was achieved.

Original languageEnglish
Article number233502
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
Publication statusPublished - 2010 Dec 6

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant, funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0(2007)].

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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