Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy

Mvoung Seok Kim, Young Don Ko, Tae Hyoung Moon, Min Chang Jeong, Jae Min Myoung, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The characteristics of the HfO2 dielectric layer on the p-type Si substrate by MOMBE process have been investigated. The electrical properties, surface morphology, and relative concentration of HfO2 films could be tuned by O2/Ar ratio.

Original languageEnglish
Title of host publicationIMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
EditorsHiroshi Nozawa
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages77-78
Number of pages2
ISBN (Electronic)0780384237, 9780780384231
DOIs
Publication statusPublished - 2004 Jan 1
Event2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004 - Kyoto, Japan
Duration: 2004 Jul 262004 Jul 28

Publication series

NameIMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai

Other

Other2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004
CountryJapan
CityKyoto
Period04/7/2604/7/28

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, M. S., Ko, Y. D., Moon, T. H., Jeong, M. C., Myoung, J. M., & Yun, I. (2004). Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy. In H. Nozawa (Ed.), IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai (pp. 77-78). [1566416] (IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2004.1566416