Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy

Mvoung Seok Kim, Young Don Ko, Tae Hyoung Moon, Min Chang Jeong, Jae Min Myoung, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The characteristics of the HfO2 dielectric layer on the p-type Si substrate by MOMBE process have been investigated. The electrical properties, surface morphology, and relative concentration of HfO2 films could be tuned by O2/Ar ratio.

Original languageEnglish
Title of host publicationIMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
EditorsHiroshi Nozawa
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages77-78
Number of pages2
ISBN (Electronic)0780384237, 9780780384231
DOIs
Publication statusPublished - 2004 Jan 1
Event2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004 - Kyoto, Japan
Duration: 2004 Jul 262004 Jul 28

Publication series

NameIMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai

Other

Other2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004
CountryJapan
CityKyoto
Period04/7/2604/7/28

Fingerprint

Molecular beam epitaxy
Surface morphology
Electric properties
Substrates
Metals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, M. S., Ko, Y. D., Moon, T. H., Jeong, M. C., Myoung, J. M., & Yun, I. (2004). Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy. In H. Nozawa (Ed.), IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai (pp. 77-78). [1566416] (IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2004.1566416
Kim, Mvoung Seok ; Ko, Young Don ; Moon, Tae Hyoung ; Jeong, Min Chang ; Myoung, Jae Min ; Yun, Ilgu. / Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy. IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. editor / Hiroshi Nozawa. Institute of Electrical and Electronics Engineers Inc., 2004. pp. 77-78 (IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai).
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title = "Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy",
abstract = "The characteristics of the HfO2 dielectric layer on the p-type Si substrate by MOMBE process have been investigated. The electrical properties, surface morphology, and relative concentration of HfO2 films could be tuned by O2/Ar ratio.",
author = "Kim, {Mvoung Seok} and Ko, {Young Don} and Moon, {Tae Hyoung} and Jeong, {Min Chang} and Myoung, {Jae Min} and Ilgu Yun",
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}

Kim, MS, Ko, YD, Moon, TH, Jeong, MC, Myoung, JM & Yun, I 2004, Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy. in H Nozawa (ed.), IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai., 1566416, IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai, Institute of Electrical and Electronics Engineers Inc., pp. 77-78, 2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004, Kyoto, Japan, 04/7/26. https://doi.org/10.1109/IMFEDK.2004.1566416

Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy. / Kim, Mvoung Seok; Ko, Young Don; Moon, Tae Hyoung; Jeong, Min Chang; Myoung, Jae Min; Yun, Ilgu.

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. ed. / Hiroshi Nozawa. Institute of Electrical and Electronics Engineers Inc., 2004. p. 77-78 1566416 (IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy

AU - Kim, Mvoung Seok

AU - Ko, Young Don

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AU - Myoung, Jae Min

AU - Yun, Ilgu

PY - 2004/1/1

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N2 - The characteristics of the HfO2 dielectric layer on the p-type Si substrate by MOMBE process have been investigated. The electrical properties, surface morphology, and relative concentration of HfO2 films could be tuned by O2/Ar ratio.

AB - The characteristics of the HfO2 dielectric layer on the p-type Si substrate by MOMBE process have been investigated. The electrical properties, surface morphology, and relative concentration of HfO2 films could be tuned by O2/Ar ratio.

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Kim MS, Ko YD, Moon TH, Jeong MC, Myoung JM, Yun I. Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy. In Nozawa H, editor, IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc. 2004. p. 77-78. 1566416. (IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2004.1566416