Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporatio of cerium oxide into the Ta barrier

Dong Soo Yoon, Hong Koo Baik, Sung Man Lee

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Abstract

The effects of CeO2 addition on the microstructural change of a Ta diffusion barrier film and thermal stability of the Cu/Ta/Si system were investigated. When a Ta layer was prepared with CeO2 addition, the suicide formation was retarded up to 800 °C. The Cu/Ta+CeO2/Si system retained its structure up to 800 °C without an increase in stack resistivity, while the Cu/Ta/Si structure degraded after annealing at 550 °C. The Ta+CeO2 diffusion barrier showed an amorphous microstructure and chemically strong bonds with Ta-Ce-O. It appeared that the thermal stability of the Cu/Ta+CeO2 interface as well as the Ta+CeO2/Si interface was higher than that of both Cu/Ta and Ta/Si interfaces. Therefore, the Ta film prepared by CeO2 addition effectively prevented the interdiffusion of Cu and Si through the diffusion barrier up to 800 °C.

Original languageEnglish
Pages (from-to)8074-8076
Number of pages3
JournalJournal of Applied Physics
Volume83
Issue number12
DOIs
Publication statusPublished - 1998 Jun 15

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cerium oxides
thermal stability
microstructure
electrical resistivity
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporatio of cerium oxide into the Ta barrier",
abstract = "The effects of CeO2 addition on the microstructural change of a Ta diffusion barrier film and thermal stability of the Cu/Ta/Si system were investigated. When a Ta layer was prepared with CeO2 addition, the suicide formation was retarded up to 800 °C. The Cu/Ta+CeO2/Si system retained its structure up to 800 °C without an increase in stack resistivity, while the Cu/Ta/Si structure degraded after annealing at 550 °C. The Ta+CeO2 diffusion barrier showed an amorphous microstructure and chemically strong bonds with Ta-Ce-O. It appeared that the thermal stability of the Cu/Ta+CeO2 interface as well as the Ta+CeO2/Si interface was higher than that of both Cu/Ta and Ta/Si interfaces. Therefore, the Ta film prepared by CeO2 addition effectively prevented the interdiffusion of Cu and Si through the diffusion barrier up to 800 °C.",
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Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporatio of cerium oxide into the Ta barrier. / Yoon, Dong Soo; Baik, Hong Koo; Lee, Sung Man.

In: Journal of Applied Physics, Vol. 83, No. 12, 15.06.1998, p. 8074-8076.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporatio of cerium oxide into the Ta barrier

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N2 - The effects of CeO2 addition on the microstructural change of a Ta diffusion barrier film and thermal stability of the Cu/Ta/Si system were investigated. When a Ta layer was prepared with CeO2 addition, the suicide formation was retarded up to 800 °C. The Cu/Ta+CeO2/Si system retained its structure up to 800 °C without an increase in stack resistivity, while the Cu/Ta/Si structure degraded after annealing at 550 °C. The Ta+CeO2 diffusion barrier showed an amorphous microstructure and chemically strong bonds with Ta-Ce-O. It appeared that the thermal stability of the Cu/Ta+CeO2 interface as well as the Ta+CeO2/Si interface was higher than that of both Cu/Ta and Ta/Si interfaces. Therefore, the Ta film prepared by CeO2 addition effectively prevented the interdiffusion of Cu and Si through the diffusion barrier up to 800 °C.

AB - The effects of CeO2 addition on the microstructural change of a Ta diffusion barrier film and thermal stability of the Cu/Ta/Si system were investigated. When a Ta layer was prepared with CeO2 addition, the suicide formation was retarded up to 800 °C. The Cu/Ta+CeO2/Si system retained its structure up to 800 °C without an increase in stack resistivity, while the Cu/Ta/Si structure degraded after annealing at 550 °C. The Ta+CeO2 diffusion barrier showed an amorphous microstructure and chemically strong bonds with Ta-Ce-O. It appeared that the thermal stability of the Cu/Ta+CeO2 interface as well as the Ta+CeO2/Si interface was higher than that of both Cu/Ta and Ta/Si interfaces. Therefore, the Ta film prepared by CeO2 addition effectively prevented the interdiffusion of Cu and Si through the diffusion barrier up to 800 °C.

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