Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen

Sang Joon Park, Woo Hee Kim, W. J. Maeng, Y. S. Yang, C. G. Park, Hyungjun Kim, Kook Nyung Lee, Suk Won Jung, W. K. Seong

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38 Citations (Scopus)

Abstract

The effect of the oxygen exposure on ruthenium atomic layer deposition (ALD) was investigated. Ru ALD was carried out using bis(cyclopentadienyl)ruthenium and oxygen gas. To investigate the effect of the oxygen exposure, the total oxygen exposure was changed by two different ways; change of exposure time at a constant flow and change of flow at a constant exposure time. While the increase in oxygen exposure time did not change the film properties, the increase in the oxygen flow rate resulted in a significant increase in the growth rate and resistivity. The properties of ALD Ru films prepared at different oxygen exposure conditions were analyzed by various techniques including synchrotron radiation X-ray diffraction, X-ray photoelectron spectroscopy, X-ray reflectivity, and transmission electron microscopy. The growth mechanism is discussed based on the analysis results.

Original languageEnglish
Pages (from-to)7345-7349
Number of pages5
JournalThin Solid Films
Volume516
Issue number21
DOIs
Publication statusPublished - 2008 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Park, S. J., Kim, W. H., Maeng, W. J., Yang, Y. S., Park, C. G., Kim, H., Lee, K. N., Jung, S. W., & Seong, W. K. (2008). Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen. Thin Solid Films, 516(21), 7345-7349. https://doi.org/10.1016/j.tsf.2008.02.011