Abstract
The effect of the oxygen exposure on ruthenium atomic layer deposition (ALD) was investigated. Ru ALD was carried out using bis(cyclopentadienyl)ruthenium and oxygen gas. To investigate the effect of the oxygen exposure, the total oxygen exposure was changed by two different ways; change of exposure time at a constant flow and change of flow at a constant exposure time. While the increase in oxygen exposure time did not change the film properties, the increase in the oxygen flow rate resulted in a significant increase in the growth rate and resistivity. The properties of ALD Ru films prepared at different oxygen exposure conditions were analyzed by various techniques including synchrotron radiation X-ray diffraction, X-ray photoelectron spectroscopy, X-ray reflectivity, and transmission electron microscopy. The growth mechanism is discussed based on the analysis results.
| Original language | English |
|---|---|
| Pages (from-to) | 7345-7349 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 516 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2008 Sept 1 |
Bibliographical note
Funding Information:The Synchrotron XRD experiments were carried out at the 3C2 and 5C2 beam line of Pohang Accelerator Laboratory (PAL). The RBS analysis was performed at Korea Institute of Science and Technology. This work was supported by the System IC 2010 program, the second stage BK21 Program of the Ministry of Education and Human Resources Development, the POSTECH core research program, the Korea Electronics Technology Institute under contract 10023796, the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-005-J13102), and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R01-2007-000-20143-0, 2007-02864).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry