Effective formation of interface controlled Y2O3 thin film on Si(1 0 0) in a metal-(ferroelectric)-insulator-semiconductor structure

Kwang Ho Kwon, Chang Ki Lee, Jun Kyu Yang, Sun Gyu Choi, Ho Jung Chang, Hyeongtag Jeon, Hyung Ho Park

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Yttrium was deposited on the chemical oxide of Si and annealed under vacuum to control the interface for the formation of Y2O3 as an insulating barrier to construct a metal-ferroelectric-insulator-semiconductor structure. Two different pre-annealing temperatures of 600 and 700 °C were chosen to investigate the effect of the interface state formed after the pre-annealing step on the successive formation of Y2O3 insulator and Nd2Ti2O7 (NTO) ferroelectric layer through annealing under an oxygen atmosphere at 800 °C. Pre-anneal treatments of Y-metal/chemical-SiO2/Si at 600 and 700 °C induced a formation of Y2O3 and Y-silicate, respectively. The difference in the pre-anneal temperature induced almost no change in the electrical properties of the Y2O3/interface/Si system, but degraded properties were observed in the NTO/Y2O3/interface/Si system pre-annealed at 600 °C when compared with the sample pre-annealed at 700 °C. C-V characteristics of the NTO/Y2O3/Si structured system showed a clockwise direction of hysteresis, and this gap could be used as a memory window for a ferroelectric-gate. A smaller hysteric gap and electrical breakdown values were observed in the NTO/Y2O3/Si system pre-annealed at 600 °C, and this was due to an unintentional distribution of the applied field from the presence of an interfacial layer containing Y-silicate and SiO2 phases.

Original languageEnglish
Pages (from-to)1781-1785
Number of pages5
JournalMicroelectronic Engineering
Volume85
Issue number8
DOIs
Publication statusPublished - 2008 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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