The heat loss of the a-Si:H resistor layer in a microbolometer might be reduced by using ordered mesoporous TiO2 thin films as thermal insulation layers. Infrared absorption of mesoporous TiO2 thin films in the 833-1250 cm-1 wave number region was measured using a Fourier transform infrared spectrometer. Also, the infrared absorption rates of upper and lower mesoporous TiO2 films inserted into the microbolometer were calculated to be above 84% in the 8-12 μm wavelength region. The CFD-ACE thermal simulation program was used to evaluate the thermal isolation effectiveness of mesoporous TiO2 films on the a-Si:H layer; the inclusion of this film on the a-Si:H layer improved heat conservation. A mesoporous TiO2 thin film effectively reduced the thermal loss from a-Si:H resistor surface and drastically increased the temperature of the resistor film.
|Number of pages||5|
|Journal||Sensors and Actuators, A: Physical|
|Publication status||Published - 2009 Oct|
Bibliographical noteFunding Information:
This work was supported by the IT R&D program of MKE/IITA [2009-F-018-01, TFT backplane technology for next generation display].
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering