Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation

Wei Yip Loh, Hasnaa Etienne, Brian Coss, Injo Ok, Dean Turnbaugh, Yohann Spiegel, Frank Torregrosa, Joel Banti, Laurent Roux, Pui Yee Hung, Jungwoo Oh, Barry Sassman, Kelly Radar, Prashant Majhi, Hsing Huang Tseng, Rajarao Jammy

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Abstract

Using a presilicide implantation approach, we demonstrate that the Schottky barrier height (SBH) of NiSi/n-Si(100) can be modulated by doping a Si substrate with a halogen species such as chlorine. Activation energy measurements indicate that an ultralow barrier of 0.08 eV for NiS/n-Si can be achieved when a high dose ∼ 1 × 1015cm2 of chlorine is implanted prior to Ni silicidation. A secondary ion mass spectroscopy analysis on the presilicide Cl-implanted NiSi shows chlorine segregates at the interface with SBH tuning from 0.68 to 0.08 eV on n-Si and a corresponding increase in hole SBH on p-Si(100). The presilicide Cl-implanted NiSi film also demonstrates an enhanced thermal stability with a low sheet resistively of < 28μ Ω · cm even up to 850 °C.

Original languageEnglish
Pages (from-to)1140-1142
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
Publication statusPublished - 2009 Oct 14

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Loh, W. Y., Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Hung, P. Y., Oh, J., Sassman, B., Radar, K., Majhi, P., Tseng, H. H., & Jammy, R. (2009). Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation. IEEE Electron Device Letters, 30(11), 1140-1142. https://doi.org/10.1109/LED.2009.2031828