Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide

Yue Wang, Kyung Mun Kang, Minjae Kim, Hyung Ho Park

Research output: Contribution to journalArticle

Abstract

The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

Original languageEnglish
Pages (from-to)302-307
Number of pages6
JournalJournal of the Korean Ceramic Society
Volume56
Issue number3
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Atomic layer deposition
Oxygen vacancies
Passivation
Hydrogen peroxide
Hydrogen Peroxide
Oxygen
Thin films
Defects
Carrier concentration

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

@article{c82866df57f74ae99c799246bfe3f32c,
title = "Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide",
abstract = "The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.",
author = "Yue Wang and Kang, {Kyung Mun} and Minjae Kim and Park, {Hyung Ho}",
year = "2019",
month = "1",
day = "1",
doi = "10.4191/kcers.2019.56.3.11",
language = "English",
volume = "56",
pages = "302--307",
journal = "Journal of the Korean Ceramic Society",
issn = "1229-7801",
publisher = "Korean Ceramic Society",
number = "3",

}

Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide. / Wang, Yue; Kang, Kyung Mun; Kim, Minjae; Park, Hyung Ho.

In: Journal of the Korean Ceramic Society, Vol. 56, No. 3, 01.01.2019, p. 302-307.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide

AU - Wang, Yue

AU - Kang, Kyung Mun

AU - Kim, Minjae

AU - Park, Hyung Ho

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

AB - The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

UR - http://www.scopus.com/inward/record.url?scp=85070824327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070824327&partnerID=8YFLogxK

U2 - 10.4191/kcers.2019.56.3.11

DO - 10.4191/kcers.2019.56.3.11

M3 - Article

AN - SCOPUS:85070824327

VL - 56

SP - 302

EP - 307

JO - Journal of the Korean Ceramic Society

JF - Journal of the Korean Ceramic Society

SN - 1229-7801

IS - 3

ER -