The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.
Bibliographical noteFunding Information:
This manuscript was based on the work “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”, supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program No. 10068075. Yue Wang thanks the China Scholarship Council (CSC) for financial support.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites