Abstract
The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.
| Original language | English |
|---|---|
| Pages (from-to) | 302-307 |
| Number of pages | 6 |
| Journal | Journal of the Korean Ceramic Society |
| Volume | 56 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
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Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide. / Wang, Yue; Kang, Kyung Mun; Kim, Minjae; Park, Hyung Ho.
In: Journal of the Korean Ceramic Society, Vol. 56, No. 3, 01.01.2019, p. 302-307.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide
AU - Wang, Yue
AU - Kang, Kyung Mun
AU - Kim, Minjae
AU - Park, Hyung Ho
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.
AB - The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.
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U2 - 10.4191/kcers.2019.56.3.11
DO - 10.4191/kcers.2019.56.3.11
M3 - Article
AN - SCOPUS:85070824327
VL - 56
SP - 302
EP - 307
JO - Journal of the Korean Ceramic Society
JF - Journal of the Korean Ceramic Society
SN - 1229-7801
IS - 3
ER -