Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide

Yue Wang; Kyung Mun Kang; Minjae Kim; Hyung Ho Park

doi:10.4191/kcers.2019.56.3.11

Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide

Yue Wang, Kyung Mun Kang, Minjae Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H₂O₂ (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H₂O₂ as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H₂O₂ concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

Original language	English
Pages (from-to)	302-307
Number of pages	6
Journal	Journal of the Korean Ceramic Society
Volume	56
Issue number	3
DOIs	https://doi.org/10.4191/kcers.2019.56.3.11
Publication status	Published - 2019

Bibliographical note

Funding Information:
This manuscript was based on the work “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”, supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program No. 10068075. Yue Wang thanks the China Scholarship Council (CSC) for financial support.

All Science Journal Classification (ASJC) codes

Ceramics and Composites

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@article{c82866df57f74ae99c799246bfe3f32c,

title = "Effective oxygen-defect passivation in zno thin films prepared by atomic layer deposition using hydrogen peroxide",

abstract = "The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.",

author = "Yue Wang and Kang, {Kyung Mun} and Minjae Kim and Park, {Hyung Ho}",

note = "Funding Information: This manuscript was based on the work “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”, supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program No. 10068075. Yue Wang thanks the China Scholarship Council (CSC) for financial support.",

year = "2019",

doi = "10.4191/kcers.2019.56.3.11",

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AU - Wang, Yue

AU - Kang, Kyung Mun

AU - Kim, Minjae

AU - Park, Hyung Ho

N1 - Funding Information: This manuscript was based on the work “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”, supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program No. 10068075. Yue Wang thanks the China Scholarship Council (CSC) for financial support.

PY - 2019

Y1 - 2019

N2 - The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

AB - The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

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