Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Sunil Babu Eadi; Jeong Chan Lee; Hyeong Sub Song; Jungwoo Oh; Ga Won Lee; Hi Deok Lee

doi:10.1038/s41598-020-61011-4

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Sunil Babu Eadi, Jeong Chan Lee, Hyeong Sub Song, Jungwoo Oh, Ga Won Lee, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10⁻⁸ Ω·cm², which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10⁻⁶ Ω·cm². The current–voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

Original language	English
Article number	4054
Journal	Scientific reports
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41598-020-61011-4
Publication status	Published - 2020 Dec 1

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade Industry and Energy (MOTIE) (10067808) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. It was also supported by Ministry of Science and ICT, the National Research Foundation of Korea (NRF) (2019M3F3A1A01074449) and support program for the development of intelligent semiconductor leading technology.

Publisher Copyright:
© 2020, The Author(s).

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title = "Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs",

abstract = "Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10−8 Ω·cm2, which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10−6 Ω·cm2. The current–voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.",

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note = "Funding Information: This research was supported by the Ministry of Trade Industry and Energy (MOTIE) (10067808) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. It was also supported by Ministry of Science and ICT, the National Research Foundation of Korea (NRF) (2019M3F3A1A01074449) and support program for the development of intelligent semiconductor leading technology. Publisher Copyright: {\textcopyright} 2020, The Author(s).",

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AU - Oh, Jungwoo

AU - Lee, Ga Won

AU - Lee, Hi Deok

N1 - Funding Information: This research was supported by the Ministry of Trade Industry and Energy (MOTIE) (10067808) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. It was also supported by Ministry of Science and ICT, the National Research Foundation of Korea (NRF) (2019M3F3A1A01074449) and support program for the development of intelligent semiconductor leading technology. Publisher Copyright: © 2020, The Author(s).

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N2 - Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10−8 Ω·cm2, which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10−6 Ω·cm2. The current–voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

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Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

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