β-Ga2O3 Schottky barrier diodes (SBDs) were demonstrated with Ni Schottky contact deposited by the confined magnetic field-based sputtering (CMFS) method. A shallow interfacial layer was formed by the diffusion of Ni into β-Ga2O3 after post-annealing treatment, which significantly influenced the electrical performance of the CMFS-Ni/β-Ga2O3 SBDs. The CMFS method was used to vary the Schottky barrier height and the ideality factor from 0.84 to 1.33 eV and 1.20 to 1.04, respectively. The leakage current of the CMFS-SBDs was only 10% of the leakage current using E-beam Ni-based SBDs, and the thermal stability of the CMFS-SBDs also was much higher than that of the E-beam Ni SBDs. We confirmed that the effective diffusion of Ni atoms could substitute for Ga through the activation of the β-Ga2O3 with CMFS.
Bibliographical noteFunding Information:
This work was financially supported by grants from Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2017R1D1A1B03030818).
© 2019 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Materials Chemistry