Abstract
The effectiveness of thin SiGe buffer layers in terminating threading dislocations and reducing photodiode dark current for Ge epitaxially grown on Si (001) has been investigated. The structural morphology of the films was studied by atomic force microscopy and transmission electron microscopy. The dark current of Ge on Si photodiodes can be reduced by over an order of magnitude by incorporating two different composition SiGe buffer layers. The origin of dark current and the effectiveness of thermal annealing the SiGe layers were also studied.
| Original language | English |
|---|---|
| Pages (from-to) | 238-242 |
| Number of pages | 5 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 43 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2007 Mar |
Bibliographical note
Funding Information:Manuscript received September 25, 2006; revised November 18, 2006. This work was supported in part by MARCO through the IFC program. Z. Huang is with the Microelectronics Research Center, College of Engineering, The University of Texas at Austin, Austin, TX 78758-4445 USA (e-mail: huang@ece.utexas.edu). J. Oh is with Front End Processes, SEMATECH, Austin, TX 78741 USA. S. K. Banerjee is with the Department of Electrical and Computer Engineering, College of Engineering, The University of Texas at Austin, Austin, TX 78712 USA (e-mail: banerjee@ece.utexas.edu). J. C. Campbell is with the School of Engineering and Applied Science, Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904-4743 USA (e-mail: jcc7s@virginia.edu). Digital Object Identifier 10.1109/JQE.2006.890395
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering