Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors

Zhihong Huang, Jungwoo Oh, Sanjay K. Banerjee, Joe C. Campbell

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The effectiveness of thin SiGe buffer layers in terminating threading dislocations and reducing photodiode dark current for Ge epitaxially grown on Si (001) has been investigated. The structural morphology of the films was studied by atomic force microscopy and transmission electron microscopy. The dark current of Ge on Si photodiodes can be reduced by over an order of magnitude by incorporating two different composition SiGe buffer layers. The origin of dark current and the effectiveness of thermal annealing the SiGe layers were also studied.

Original languageEnglish
Pages (from-to)238-242
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume43
Issue number3
DOIs
Publication statusPublished - 2007 Mar 1

Fingerprint

Dark currents
Buffer layers
Photodetectors
dark current
photometers
buffers
Photodiodes
photodiodes
stopping
Atomic force microscopy
atomic force microscopy
Annealing
Transmission electron microscopy
transmission electron microscopy
annealing
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Huang, Zhihong ; Oh, Jungwoo ; Banerjee, Sanjay K. ; Campbell, Joe C. / Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors. In: IEEE Journal of Quantum Electronics. 2007 ; Vol. 43, No. 3. pp. 238-242.
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Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors. / Huang, Zhihong; Oh, Jungwoo; Banerjee, Sanjay K.; Campbell, Joe C.

In: IEEE Journal of Quantum Electronics, Vol. 43, No. 3, 01.03.2007, p. 238-242.

Research output: Contribution to journalArticle

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