Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP

Hyung Soon Park, Jong Goo Jung, Jum Yong Park, Jong Han Shin, Cheol Hwi Ryu, Hyun Chul Sohn, Hyun Goo Kang, Takeo Katho, Jae Gun Park

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The effects of the abrasive morphology and surfactant concentration in ceria slurry on removal rates for silicon oxide and silicon nitride films were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride films decreased with increasing surfactant concentration. This result was qualitatively explained by a model in which abrasive particles move through a viscous layer caused by surfactant adsorption onto the film surface being polished.

Original languageEnglish
Pages357-365
Number of pages9
Publication statusPublished - 2005 Dec 1
Event10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States
Duration: 2005 Feb 232005 Feb 25

Other

Other10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
CountryUnited States
CityFremont, CA
Period05/2/2305/2/25

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Park, H. S., Jung, J. G., Park, J. Y., Shin, J. H., Ryu, C. H., Sohn, H. C., Kang, H. G., Katho, T., & Park, J. G. (2005). Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP. 357-365. Paper presented at 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005, Fremont, CA, United States.