Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors

S. Park; E. N. Cho; I. Yun

doi:10.1149/1.3701531

Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors

S. Park, E. N. Cho, I. Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV _th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T _interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N _T).

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 13
Pages	111-117
Number of pages	7
Edition	7
DOIs	https://doi.org/10.1149/1.3701531
Publication status	Published - 2012
Event	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10

Publication series

Name	ECS Transactions
Number	7
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
Country	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

All Science Journal Classification (ASJC) codes

Engineering(all)

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abstract = "Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).",

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Park, S, Cho, EN & Yun, I 2012, Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors. in Wide-Bandgap Semiconductor Materials and Devices 13. 7 edn, ECS Transactions, no. 7, vol. 45, pp. 111-117, 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3701531

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AU - Cho, E. N.

AU - Yun, I.

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N2 - Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).

AB - Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).

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Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors

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