TY - GEN
T1 - Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors
AU - Park, S.
AU - Cho, E. N.
AU - Yun, I.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).
AB - Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).
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U2 - 10.1149/1.3701531
DO - 10.1149/1.3701531
M3 - Conference contribution
AN - SCOPUS:84866733720
SN - 9781566779593
T3 - ECS Transactions
SP - 111
EP - 117
BT - Wide-Bandgap Semiconductor Materials and Devices 13
T2 - 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
Y2 - 6 May 2012 through 10 May 2012
ER -