Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors

S. Park, E. N. Cho, I. Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages111-117
Number of pages7
Edition7
DOIs
Publication statusPublished - 2012 Nov 19
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Park, S., Cho, E. N., & Yun, I. (2012). Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors. In Wide-Bandgap Semiconductor Materials and Devices 13 (7 ed., pp. 111-117). (ECS Transactions; Vol. 45, No. 7). https://doi.org/10.1149/1.3701531