Abstract
Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).
| Original language | English |
|---|---|
| Title of host publication | Wide-Bandgap Semiconductor Materials and Devices 13 |
| Pages | 111-117 |
| Number of pages | 7 |
| Volume | 45 |
| Edition | 7 |
| DOIs | |
| Publication status | Published - 2012 Nov 19 |
| Event | 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10 |
Other
| Other | 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting |
|---|---|
| Country | United States |
| City | Seattle, WA |
| Period | 12/5/6 → 12/5/10 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
}
Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors. / Park, S.; Cho, E. N.; Yun, Ilgu.
Wide-Bandgap Semiconductor Materials and Devices 13. Vol. 45 7. ed. 2012. p. 111-117.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effects of alternating pulse bias stress on amorphous InGaZnO thin film transistors
AU - Park, S.
AU - Cho, E. N.
AU - Yun, Ilgu
PY - 2012/11/19
Y1 - 2012/11/19
N2 - Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).
AB - Amorphous InGaZnO (a-IGZO) TFTs attracted more demands due to the transparency and high mobility. Since TFTs are always exposed to both positive and negative gate bias, the alternating pulse bias stress tests are required to ensure stable TFT characteristics. In this paper, the effects of alternating pulse bias stress on the threshold voltage shift (ΔV th) of a-IGZO TFTs with respect to the channel length (L) and the stress time interval (T interval) are investigated using the concepts of the stretched-exponential function and the density of total trap states (N T).
UR - http://www.scopus.com/inward/record.url?scp=84866733720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866733720&partnerID=8YFLogxK
U2 - 10.1149/1.3701531
DO - 10.1149/1.3701531
M3 - Conference contribution
SN - 9781566779593
VL - 45
SP - 111
EP - 117
BT - Wide-Bandgap Semiconductor Materials and Devices 13
ER -