Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering

Jong Yoon Ha, Ji Won Choi, Chong Yun Kang, S. F. Karmanenko, Seok Jin Yoon, Doo Jin Choi, Hyun Jai Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number37-41
DOIs
Publication statusPublished - 2005 Sep 30

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dielectric properties
magnetron sputtering
annealing
thin films
dielectric loss
contraction
furnaces
boxes
permittivity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ha, Jong Yoon ; Choi, Ji Won ; Kang, Chong Yun ; Karmanenko, S. F. ; Yoon, Seok Jin ; Choi, Doo Jin ; Kim, Hyun Jai. / Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering. In: Japanese Journal of Applied Physics, Part 2: Letters. 2005 ; Vol. 44, No. 37-41.
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Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering. / Ha, Jong Yoon; Choi, Ji Won; Kang, Chong Yun; Karmanenko, S. F.; Yoon, Seok Jin; Choi, Doo Jin; Kim, Hyun Jai.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 37-41, 30.09.2005.

Research output: Contribution to journalArticle

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AU - Choi, Ji Won

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AU - Yoon, Seok Jin

AU - Choi, Doo Jin

AU - Kim, Hyun Jai

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