Effects of annealing temperature on electrical characteristics of solution-processed zinc tin oxide thin-film transistors

Jeong Soo Lee, Yong Jin Kim, Yong Uk Lee, Yong Hoon Kim, Jang Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigated the effects of annealing temperature on the electrical characteristics of solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). When the annealing temperature increased from 300 to 500 °C, the threshold voltage of solution-processed ZTO TFTs decreased from 16.89 to -0.23 V owing to the increase in electron concentration in the active layer. The increase in electron concentration is caused by the decrease in Cl atomic concentration. When the annealing temperature increased to 500 °C, the saturation mobility increased from 0.18 to 4.75 cm 2.V -1.s -1 and the threshold voltage shift for positive gate bias stress as a reliability characteristic decreased from 5.34 to 2.6 V, because of the decomposition of halide residues such as Cl and the nanocrystallization.

Original languageEnglish
Article number061101
JournalJapanese Journal of Applied Physics
Volume51
Issue number6 PART 1
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
Oxide films
transistors
Annealing
Threshold voltage
threshold voltage
annealing
thin films
Nanocrystallization
Electrons
Temperature
halides
temperature
electrons
Decomposition
saturation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, Jeong Soo ; Kim, Yong Jin ; Lee, Yong Uk ; Kim, Yong Hoon ; Kwon, Jang Yeon ; Han, Min Koo. / Effects of annealing temperature on electrical characteristics of solution-processed zinc tin oxide thin-film transistors. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 6 PART 1.
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abstract = "We investigated the effects of annealing temperature on the electrical characteristics of solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). When the annealing temperature increased from 300 to 500 °C, the threshold voltage of solution-processed ZTO TFTs decreased from 16.89 to -0.23 V owing to the increase in electron concentration in the active layer. The increase in electron concentration is caused by the decrease in Cl atomic concentration. When the annealing temperature increased to 500 °C, the saturation mobility increased from 0.18 to 4.75 cm 2.V -1.s -1 and the threshold voltage shift for positive gate bias stress as a reliability characteristic decreased from 5.34 to 2.6 V, because of the decomposition of halide residues such as Cl and the nanocrystallization.",
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Effects of annealing temperature on electrical characteristics of solution-processed zinc tin oxide thin-film transistors. / Lee, Jeong Soo; Kim, Yong Jin; Lee, Yong Uk; Kim, Yong Hoon; Kwon, Jang Yeon; Han, Min Koo.

In: Japanese Journal of Applied Physics, Vol. 51, No. 6 PART 1, 061101, 01.06.2012.

Research output: Contribution to journalArticle

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AU - Lee, Jeong Soo

AU - Kim, Yong Jin

AU - Lee, Yong Uk

AU - Kim, Yong Hoon

AU - Kwon, Jang Yeon

AU - Han, Min Koo

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AB - We investigated the effects of annealing temperature on the electrical characteristics of solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). When the annealing temperature increased from 300 to 500 °C, the threshold voltage of solution-processed ZTO TFTs decreased from 16.89 to -0.23 V owing to the increase in electron concentration in the active layer. The increase in electron concentration is caused by the decrease in Cl atomic concentration. When the annealing temperature increased to 500 °C, the saturation mobility increased from 0.18 to 4.75 cm 2.V -1.s -1 and the threshold voltage shift for positive gate bias stress as a reliability characteristic decreased from 5.34 to 2.6 V, because of the decomposition of halide residues such as Cl and the nanocrystallization.

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