Abstract
We investigated the effects of annealing temperature on the electrical characteristics of solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). When the annealing temperature increased from 300 to 500 °C, the threshold voltage of solution-processed ZTO TFTs decreased from 16.89 to -0.23 V owing to the increase in electron concentration in the active layer. The increase in electron concentration is caused by the decrease in Cl atomic concentration. When the annealing temperature increased to 500 °C, the saturation mobility increased from 0.18 to 4.75 cm 2.V -1.s -1 and the threshold voltage shift for positive gate bias stress as a reliability characteristic decreased from 5.34 to 2.6 V, because of the decomposition of halide residues such as Cl and the nanocrystallization.
| Original language | English |
|---|---|
| Article number | 061101 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 51 |
| Issue number | 6 PART 1 |
| DOIs | |
| Publication status | Published - 2012 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Effects of annealing temperature on electrical characteristics of solution-processed zinc tin oxide thin-film transistors. / Lee, Jeong Soo; Kim, Yong Jin; Lee, Yong Uk; Kim, Yong Hoon; Kwon, Jang Yeon; Han, Min Koo.
In: Japanese Journal of Applied Physics, Vol. 51, No. 6 PART 1, 061101, 01.06.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of annealing temperature on electrical characteristics of solution-processed zinc tin oxide thin-film transistors
AU - Lee, Jeong Soo
AU - Kim, Yong Jin
AU - Lee, Yong Uk
AU - Kim, Yong Hoon
AU - Kwon, Jang Yeon
AU - Han, Min Koo
PY - 2012/6/1
Y1 - 2012/6/1
N2 - We investigated the effects of annealing temperature on the electrical characteristics of solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). When the annealing temperature increased from 300 to 500 °C, the threshold voltage of solution-processed ZTO TFTs decreased from 16.89 to -0.23 V owing to the increase in electron concentration in the active layer. The increase in electron concentration is caused by the decrease in Cl atomic concentration. When the annealing temperature increased to 500 °C, the saturation mobility increased from 0.18 to 4.75 cm 2.V -1.s -1 and the threshold voltage shift for positive gate bias stress as a reliability characteristic decreased from 5.34 to 2.6 V, because of the decomposition of halide residues such as Cl and the nanocrystallization.
AB - We investigated the effects of annealing temperature on the electrical characteristics of solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). When the annealing temperature increased from 300 to 500 °C, the threshold voltage of solution-processed ZTO TFTs decreased from 16.89 to -0.23 V owing to the increase in electron concentration in the active layer. The increase in electron concentration is caused by the decrease in Cl atomic concentration. When the annealing temperature increased to 500 °C, the saturation mobility increased from 0.18 to 4.75 cm 2.V -1.s -1 and the threshold voltage shift for positive gate bias stress as a reliability characteristic decreased from 5.34 to 2.6 V, because of the decomposition of halide residues such as Cl and the nanocrystallization.
UR - http://www.scopus.com/inward/record.url?scp=84863329430&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863329430&partnerID=8YFLogxK
U2 - 10.1143/JJAP.51.061101
DO - 10.1143/JJAP.51.061101
M3 - Article
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 PART 1
M1 - 061101
ER -